LEADER 01254cam a22003014a 4500 001 991002959899707536 008 071018s2005 it a b 000 0 ita 020 $a8886842929 035 $ab13608101-39ule_inst 040 $aBiblioteca Interfacoltà$bita 082 04$a070.50949478 100 1 $aCaldelari, Callisto$0253627 245 10$aEditoria e illuminismo fra Lugano e Milano /$cCallisto Caldelari 260 $aMilano :$bS. Bonnard,$cc2005 300 $aXXIII, 288 p. :$bill. ;$c21 cm. 440 3$aIl sapere del libro 505 2 $aIl ruolo di Lugano nel contesto italiano / di Mario Infelise -- Una doppia fortuna / di Giovanni Pozzi 600 14$aAgnelli$c$ySec. 18. 650 4$aEditoria$zLugano$ySec. 18. 700 1 $aInfelise, Mario 700 1 $aPozzi, Giovanni 907 $a.b13608101$b04-02-19$c18-10-07 912 $a991002959899707536 945 $aLE002 Bibl. Ris. 65/24$g1$i2002000745101$lle002$op$pE22.00$q-$rn$so $t0$u0$v0$w0$x0$y.i14584621$z18-10-07 945 $aLE002 070.5 CAL$g2$i2002001092358$lle002$o-$pE0.00$q-$rl$s- $t0$u0$v0$w0$x0$y.i15875799$z04-02-19 996 $aEditoria e illuminismo fra Lugano e Milano$91215639 997 $aUNISALENTO 998 $ale002$b18-10-07$cm$da $e-$fita$git $h0$i0 LEADER 04773nam 22007575 450 001 9910634053103321 005 20200630055043.0 010 $a3-540-45163-3 024 7 $a10.1007/b12953 035 $a(CKB)1000000000233138 035 $a(SSID)ssj0000323112 035 $a(PQKBManifestationID)11242971 035 $a(PQKBTitleCode)TC0000323112 035 $a(PQKBWorkID)10305733 035 $a(PQKB)10203801 035 $a(DE-He213)978-3-540-45163-1 035 $a(PPN)15517505X 035 $a(EXLCZ)991000000000233138 100 $a20100729d2004 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt 182 $cc 183 $acr 200 10$aFerroelectric Random Access Memories$b[electronic resource] $eFundamentals and Applications /$fedited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto 205 $a1st ed. 2004. 210 1$aBerlin, Heidelberg :$cSpringer Berlin Heidelberg :$cImprint: Springer,$d2004. 215 $a1 online resource (XIII, 291 p.) 225 1 $aTopics in Applied Physics,$x0303-4216 ;$v93 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a3-540-40718-9 327 $aPart I Ferroelectric Thin Films: Overview -- Novel Si-substituted Ferroelectric Films -- Static and Dynamic Properties of Domains -- Nanoscale Phenomena in Ferroelectric Thin Films -- Part II Deposition and Characterization Methods: Sputtering Techniques -- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films -- Recent Development of Ferroelectric Thin Films by MOCVD -- Materials Integration Strategies -- Characterization by Scanning Nonlinear Dielectric Microscopy -- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs -- Operation Principle and Circuit Design Issues -- High Density Integration -- Testing and Reliability -- Part IV Advanced-Type Memories: Chain FeRAMs -- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM -- FET-type FeRAMs -- Part V Applications and Future Prospects: Application to Future Information Technology World -- Subject Index. 330 $aIn fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply. 410 0$aTopics in Applied Physics,$x0303-4216 ;$v93 606 $aMetals 606 $aOptical materials 606 $aElectronics$xMaterials 606 $aCondensed matter 606 $aSolid state physics 606 $aSpectrum analysis 606 $aMicroscopy 606 $aMetallic Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/Z16000 606 $aOptical and Electronic Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/Z12000 606 $aCondensed Matter Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P25005 606 $aSolid State Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P25013 606 $aSpectroscopy and Microscopy$3https://scigraph.springernature.com/ontologies/product-market-codes/P31090 615 0$aMetals. 615 0$aOptical materials. 615 0$aElectronics$xMaterials. 615 0$aCondensed matter. 615 0$aSolid state physics. 615 0$aSpectrum analysis. 615 0$aMicroscopy. 615 14$aMetallic Materials. 615 24$aOptical and Electronic Materials. 615 24$aCondensed Matter Physics. 615 24$aSolid State Physics. 615 24$aSpectroscopy and Microscopy. 676 $a621.39/73 702 $aIshiwara$b Hiroshi$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aOkuyama$b Masanori$4edt$4http://id.loc.gov/vocabulary/relators/edt 702 $aArimoto$b Yoshihiro$4edt$4http://id.loc.gov/vocabulary/relators/edt 906 $aBOOK 912 $a9910634053103321 996 $aFerroelectric Random Access Memories$92996532 997 $aUNINA