LEADER 01438nam a2200301 i 4500
001 991002300269707536
008 131015s2001    gw a     b    001 0 eng d
020   $a3540665838
035   $ab14152538-39ule_inst
040   $aBibl. Dip.le Aggr. Ingegneria Innovazione - Sez. Ingegneria Innovazione$beng
082 00$a621.38152$221
100 1 $aBonani, Fabrizio,$d1967-$0479072
245 10$aNoise in semiconductor devices :$bmodeling and simulation /$cFabrizio Bonani, Giovanni Ghione
260   $aNew York :$bSpringer,$cc2001
300   $axxxi, 213 p. :$bill. ;$c24 cm.
440  0$aSpringer series in advanced microelectronics,$x1437-0387 ;$v7
504   $aIncludes bibliographical references and index
650  0$aElectronic noise$xMathematical models
650  0$aIntegrated circuits$xSimulation methods
650  0$aSemiconductors$xMathematical models
700 1 $aGhione, Giovanni,$d1956-$eauthor$4http://id.loc.gov/vocabulary/relators/aut$0447936
856 41$zTable of contents only$uhttp://www.loc.gov/catdir/enhancements/fy0815/2001042017-t.html
907   $a.b14152538$b28-02-14$c15-10-13
912   $a991002300269707536
945   $aLE026 621.38152 BON 01.01 2001$g1$i2026000021997$lle026$nProf. Reggiani / Biblioteca$op$pE83.67$q-$rl$s-  $t4$u0$v0$w0$x0$y.i15540194$z15-10-13
996   $aNoise in semiconductor devices$91443271
997   $aUNISALENTO
998   $ale026$b15-10-13$cm$da  $e-$feng$ggw $h0$i0