LEADER 01106nam a2200265 i 4500
001 991001315779707536
008 050803s1999    maua     b    001 0 eng  
020   $a0070655235
035   $ab1335386x-39ule_inst
040   $aDip.to Ingegneria dell'Innovazione$beng
082 00$a621.3815
100 1 $aTsividis, Yannis$027597
245 10$aOperation and modeling of the MOS transistor /$cYannis Tsividis
250   $a2nd ed
260   $aBoston :$bWCB/McGraw-Hill,$cc1999
300   $axx, 620 p. :$bill. ;$c24 cm
504   $aIncludes bibliographical references and index
650  4$aMetal oxide semiconductors$xMathematical models
650  4$aMetal oxide semiconductor field-effect transistors$xMathematical models
907   $a.b1335386x$b21-09-06$c10-11-05
912   $a991001315779707536
945   $aLE026 621.3815 TSI 01.01 1999$g1$i2026000025254$lle026$nprof. Baschirotto / Biblioteca$op$pE63.01$q-$rl$s-  $t4$u4$v0$w4$x0$y.i14149503$z10-11-05
996   $aOperation and modeling of the MOS transistor$91092950
997   $aUNISALENTO
998   $ale026$b03-08-05$cm$da  $e-$feng$gmau$h0$i0