LEADER 01233nam a2200289 i 4500
001 991001158979707536
008 050719s1999    nyua     b    001 0 eng d
020   $a0471297003
035   $ab13329285-39ule_inst
040   $aDip.to Ingegneria dell'Innovazione$beng
082 0 $a621.3815$221
100 1 $aLiu, William$0119893
245 10$aFundamentals of III-V devices :$bHBTs, MESFETs, and HFETs/HEMTs /$cWilliam Liu
260   $aNew York [etc] :$bWiley e Sons,$cc1999
300   $axii, 505 p. :$bill. ;$c25 cm
500   $a"A Wiley-Interscience publication."
504   $aIncludes bibliographical references and index
650  4$aBipolar transistors
650  4$aField-effect transistors
650  4$aMetal semiconductor field-effect transistors
856 4 $3Table of Contents$uhttp://www.loc.gov/catdir/toc/onix04/98038918.html$zTable of contents
907   $a.b13329285$b07-04-22$c19-07-05
912   $a991001158979707536
945   $aLE026 621.3815 LIU 01.01 1999$g1$i2026000021058$lle026$nProf. De Vittorio / Biblioteca$op$pE94.68$q-$rl$s-  $t4$u1$v1$w1$x0$y.i14109074$z19-07-05
996   $aFundamentals of III-V devices$91105026
997   $aUNISALENTO
998   $ale026$b19-07-05$cm$da  $e-$feng$gnyu$h0$i0