LEADER 01586nam a2200337 i 4500
001 991001039109707536
008 050518s1998    njua     b    001 0 eng d
020   $a0780334167
035   $ab13310884-39ule_inst
040   $aDip.to Ingegneria dell'Innovazione$beng
082 0 $a621.3815$221
100 1 $aBaker, R. Jacob,$d1964-$0324727
245 10$aCMOS circuit design, layout, and simulation /$cR. Jacob Baker, Harry W. Li, and David E. Boyce
260   $aNew York :$bIEEE  ;$a New York[etc] : Wiley e Sons  ,$cc1998
300   $axxiv, 902 p. :$bill. ;$c24 cm
440  0$aIEEE Press series on microelectronic systems
500   $a"IEEE Circuits & Systems Society, sponsor, IEEE Solid-State Circuits Society, sponsor."
504   $aIncludes bibliographical references and index
650  4$aMetal oxide semiconductors, Complementary$xDesign and construction
650  4$aIntegrated circuits$xDesign and construction
650  4$aMetal oxide semiconductor field-effect transistors
700 1 $aLi, Harry W.,$d1960-
700 1 $aBoyce, David E.,$d1940-
710 2 $aInstitute of Electrical and Electronics Engineers
856 4 $3Table of Contents$uhttp://www.loc.gov/catdir/toc/onix07/97021906.html$zTable of contents
907   $a.b13310884$b07-04-22$c18-05-05
912   $a991001039109707536
945   $aLE026 621.3815 BAK 01.01 1998$g1$i2026000016917$lle026$nProf. Baschirotto / Biblioteca$op$pE90.88$q-$rl$s-  $t4$u4$v0$w4$x0$y.i14072543$z18-05-05
996   $aCMOS$9835323
997   $aUNISALENTO
998   $ale026$b18-05-05$cm$da  $e-$feng$gnju$h0$i0