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008 010126s1970    us            ||| | eng  
020   $a0124808506
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035   $aLE00641086$9ExL
040   $aDip.to Fisica$bita
084   $a53.7.18
084   $a621.3.2.4
084   $a621.381'52
084   $aTK7871.85
100 1 $aEriksson, Lennart$049151
245 10$aIon implantation in semiconductors, silicon and germanium /$c[by] James W. Mayer, Lennart Eriksson and John A. Davies
260   $aNew York :$bAcademic Press,$c1970
300   $axiii, 280 p. :$bill. ;$c24 cm.
500   $aIncludes bibliographical references.
650  4$aIon implantation
650  4$aSemiconductors
700 1 $aDavies, John Arthur
907   $a.b10164704$b21-09-06$c27-06-02
912   $a991001037569707536
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996   $aIon implantation in semiconductors, silicon and germanium$9188891
997   $aUNISALENTO
998   $ale006$b01-01-01$cm$da  $e-$feng$gus $h0$i2