LEADER 01310nam a2200361 i 4500
001 991000979299707536
005 20020507104658.0
008 960417s1982    us            ||| | eng  
020   $a0444006974
035   $ab10156628-39ule_inst
035   $aLE00640108$9ExL
040   $aDip.to Fisica$bita
084   $a53(082.2)
084   $a53.7.1
084   $a537.6'22
084   $a621.3.2.4
084   $aQC610.9.G73
111 2 $aSymposium on the grain boundaries in semiconductors$0462176
245 10$aGrain boundaries in semiconductors :$bproceedings of the symposium held at the 1981 MRS Meeting, November 16-19, in Boston, Massachusetts /$cH.J. Leamy, G.E. Pike, C.H. Seager (eds.)
260   $aNew York :$bNorth-Holland Publ. Co.,$cc1982
300   $axi, 417 p. ;$c23 cm.
490 0 $aMRS Symposium Proceedings ;$v5
650  4$aGrain boundaries$xCongresses
700 1 $aLeamy, H.J.
700 1 $aPike, G.E.
700 1 $aSeager, C.H.
710 2 $aMRS
907   $a.b10156628$b17-02-17$c27-06-02
912   $a991000979299707536
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996   $aGrain boundaries in semiconductors$9187219
997   $aUNISALENTO
998   $ale006$b01-01-96$cm$da  $e-$feng$gus $h0$i1