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005 20020507104531.0
008 960710s1967    us            ||| | eng  
035   $ab10155016-39ule_inst
035   $aLE00639921$9ExL
040   $aDip.to Fisica$bita
084   $a53.7.8
084   $a621.3.2.5
084   $a621.3817
084   $aTK7874
100 1 $aBurger, Robert M.$0462144
245 10$aFundamentals of silicon integrated device technology /$cedited by Robert M. Burger and R.P. Donovan
260   $aEnglewood Cliffs, N.J. :$bPrentice-Hall,$c1967-1968
300   $a2 v. (495, 480 p.) ;$c23 cm.
490 0 $aSolid state physical electronics series
500   $aVol. 1 : Oxidation, diffusion and epitaxy.
500   $aVol. 2 : Bipolar and unipolar transistors.
650  4$aMicroelectronics
700 1 $aDonovan, R.P.
907   $a.b10155016$b17-02-17$c27-06-02
912   $a991000967799707536
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945   $aLE006 621.3.2 BUR$cV. 2$g1$i2006000053969$lle006$o-$pE0.00$q-$rl$s-  $t0$u0$v0$w0$x0$y.i1018739x$z27-06-02
996   $aFundamentals of silicon integrated device technology$9187181
997   $aUNISALENTO
998   $ale006$b01-01-96$cm$da  $e-$feng$gus $h0$i2