LEADER 01400nam a2200313 i 4500
001 991000884059707536
005 20020507102739.0
008 951121s1981    uk            ||| | eng  
035   $ab10143154-39ule_inst
035   $aLE00638541$9ExL
040   $aDip.to Fisica$bita
084   $a53(082.2)
084   $a53.7.1
084   $a537.6'22
084   $aQC611.6
111 2 $aInternational Conference on defects and radiation effects in semiconductors$0461599
245 10$aDefects and radiation effects in semiconductors, 1980 :$binvited and contributed papers from the 11th International Conference on defects and radiation effects in semiconductors, held in Oiso, Japan, 8-11 September 1980 /$cedited by R. Hasiguti
260   $aLondon :$bIOP Publishing,$c1981
300   $axiv, 571 p. :$bill. ;$c24 cm.
490 0 $aInstitute of Physics conference series ;$v59
490 0 $aInternational Conference on defects and radiation effects in semiconductors ;$v11
650  4$aSemiconductors-Defects$xCongresses
700 1 $aHasiguti, R.
907   $a.b10143154$b17-02-17$c27-06-02
912   $a991000884059707536
945   $aLE006 53.7+53.8 INS$g1$i2006000060738$lle006$o-$pE0.00$q-$rl$s-  $t0$u0$v0$w0$x0$y.i10170212$z27-06-02
996   $aDefects and radiation effects in semiconductors, 1980$9186874
997   $aUNISALENTO
998   $ale006$b01-01-95$cm$da  $e-$feng$guk $h0$i1