LEADER 01338nam a2200361 i 4500 001 991000724009707536 005 20020507172751.0 008 940902s1978 us ||| | eng 020 $a0125618506 035 $ab10748453-39ule_inst 035 $aLE01301311$9ExL 040 $aDip.to Matematica$beng 082 0 $a519.282 084 $aAMS 60J45 084 $aAMS 60J65 084 $aQC184.P67 100 1 $aPort, Sidney C.$049576 245 10$aBrownian motion and classical potential theory /$cSidney C. Port, Charles J. Stone 260 $aNew York :$bAcademic Press,$c1978 300 $axii, 236 p. :$bill. ;$c24 cm 490 0 $aProbability and mathematical statistics.$pA series of monographs and textbooks 500 $aBibliography: p. 229-232. 500 $aIncludes index 650 4$aBrownian movements 650 4$aMarkov processes 650 4$aTheory of potential 700 1 $aStone, Charles Joel$eauthor$4http://id.loc.gov/vocabulary/relators/aut$0103669 907 $a.b10748453$b23-02-17$c28-06-02 912 $a991000724009707536 945 $aLE013 60J POR11 (1978)$g1$i2013000007045$lle013$o-$pE0.00$q-$rl$s- $t0$u2$v0$w2$x0$y.i10840904$z28-06-02 996 $aBrownian motion and classical potential theory$93368788 997 $aUNISALENTO 998 $ale013$b01-01-94$cm$da $e-$feng$gus $h0$i1 LEADER 03171nam 2200613Ia 450 001 9910437974703321 005 20200520144314.0 010 $a1-299-40843-5 010 $a3-642-35079-8 024 7 $a10.1007/978-3-642-35079-5 035 $a(CKB)2670000000337197 035 $a(EBL)1106310 035 $a(OCoLC)828794263 035 $a(SSID)ssj0000879858 035 $a(PQKBManifestationID)11956604 035 $a(PQKBTitleCode)TC0000879858 035 $a(PQKBWorkID)10854022 035 $a(PQKB)11684395 035 $a(DE-He213)978-3-642-35079-5 035 $a(MiAaPQ)EBC1106310 035 $a(PPN)16832797X 035 $a(EXLCZ)992670000000337197 100 $a20130315d2013 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aTransition-metal defects in Silicon $enew insights from photoluminescence studies of highly enriched 28-Si /$fMichael Steger 205 $a1st ed. 2013. 210 $aBerlin ;$aNew York $cSpringer$dc2013 215 $a1 online resource (107 p.) 225 0 $aSpringer theses 300 $aDescription based upon print version of record. 311 $a3-642-43808-3 311 $a3-642-35078-X 320 $aIncludes bibliographical references. 327 $aIntroduction and Background -- History of the Observed Centres in Silicon -- Experimental Method -- Results -- Discussion and Conclusion. 330 $aThe fundamental properties of deep luminescence centres in Si associated with transition metals such as Cu, Ag, Au, and Pt have been a focus of interest for decades, both as markers for these deleterious contaminants, and also in the quest for efficient Si-based light emission.   This dissertation presents the results of ultra-high resolution photoluminescence studies of these centres in specially prepared, highly enriched 28-Si samples. The greatly improved spectral resolution due to this enrichment led to the discovery of isotopic fingerprints. These fingerprints have revealed that the detailed constituents of all of the centres previously studied had been identified incorrectly. They also revealed the existence of several different families of impurity complexes containing either four or five atoms chosen from Li, Cu, Ag, Au, and Pt. These centres? constituents have been determined, together with no-phonon transition energies, no-phonon isotope shifts, local vibrational mode energies, and the isotope shifts of the local vibrational mode energies. The data presented here for these centres should prove useful for the currently sought theoretical explanations of their formation, stability, and properties. 410 0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053 606 $aSemiconductors$xDefects 606 $aSilicon 615 0$aSemiconductors$xDefects. 615 0$aSilicon. 676 $a537.6 676 $a537.6223 700 $aSteger$b Michael$0871945 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910437974703321 996 $aTransition-Metal Defects in Silicon$91946814 997 $aUNINA