LEADER 01120nam a2200265 i 4500
001 991000158379707536
005 20020506105755.0
008 000703s1988    us            ||| | eng  
020   $a0883183676
035   $ab10038772-39ule_inst
035   $aLE02614170$9ExL
040   $aDip.to Ingegneria dell'Innovazione$bita
082 0 $a621.38152
100 1 $aRubloff, G.W.$0459929
245 10$aDeposition and growth :$blimits for microelectronics, Anaheim, CA 1987 /$ceditor G.W. Rubloff
260   $aNew York :$bAmerican Institute of physics,$c1988
300   $a388, [8] p. :$bill. ;$c25 cm
490 0 $aAmerican institute of physics conference proceedings ; 167. American vacuum society series ;$v4
650  4$aMicroelettronica - Semiconduttori - Tecnologia di crescita e deposizione
907   $a.b10038772$b17-02-17$c31-05-02
912   $a991000158379707536
945   $aLE026 621.38152 RUB 01.01 1988$g1$i2026000009834$lle026$o-$pE0.00$q-$rl$s-  $t4$u0$v0$w0$x0$y.i10042891$z31-05-02
996   $aDeposition and growth$9177214
997   $aUNISALENTO
998   $ale026$b01-01-00$cm$da  $e-$feng$gus $h0$i1