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040   $aDip.to Beni Arti e Storia$bita
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100 1 $aCarli, Enzo$036210
245 10$aArnolfo /$cEnzo Carli.
260   $aFirenze :$bCasa editrice EDAM,$cc1993.
300   $a301 p. :$bill. ;$c27 cm.
504   $aInclude bibliografia (p. 295-299).
600 14$aArnolfo,$cdi Cambio$xCritica
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101 | $aeng
102   $aus
181  1$6z01$ai $bxxxe  
182  1$6z01$an
200 1 $aElectrical and thermal characterization of MESFETs, HEMTs, and HBTs$fRobert Anholt
210   $aBoston [etc.]$cArtech House$d©1995
215   $aX, 310 p.$d24 cm.
225 | $aˆThe ‰Artech House microwave library
410  0$1001MIL0136696$12001 $aˆThe ‰Artech House microwave library
606   $aTransistori a effetto di campo$xModelli matematici$2FIR$3NAPC243416$9I
676   $a621.3815$9ELETTRONICA. COMPONENTI E CIRCUITI$v14
676   $a621.3815284$9Transistor e tiristor. Transistor a effetto di campo$v22
700  1$aAnholt$b, Robert$3UBOV509775$4070$0754349
790  1$aAnholt$b, Robert Edward$f <1949-    >$3NAPV112645$zAnholt, Robert
801  3$aIT$bIT-000000$c20091019
850   $aIT-BN0095          
901   $bNAP 01$cSALA DING $n$
912   $aUBO1311066
950  0$aBiblioteca Centralizzata di Ateneo$c1 v.$d 01SALA DING 621.3815                ANH.el$e 0102 0000022765  VMA A4                    1 v.$fY $h19960221$i19960221
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996   $aElectrical and thermal characterization of MESFETs, HEMTs, and HBTs$91517818
997   $aUNISANNIO