LEADER 03904nam 2200469 450 001 996499863903316 005 20230320050041.0 010 $a9789811968723$b(electronic bk.) 010 $z9789811968716 035 $a(MiAaPQ)EBC7133281 035 $a(Au-PeEL)EBL7133281 035 $a(CKB)25299342900041 035 $a(PPN)266350585 035 $a(EXLCZ)9925299342900041 100 $a20230320d2022 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aStructure and electronic properties of ultrathin in films on Si(111) /$fShigemi Terakawa 210 1$aSingapore :$cSpringer,$d[2022] 210 4$dİ2022 215 $a1 online resource (83 pages) 225 1 $aSpringer theses 311 08$aPrint version: Terakawa, Shigemi Structure and Electronic Properties of Ultrathin in Films on Si(111) Singapore : Springer,c2022 9789811968716 320 $aIncludes bibliographical references. 327 $aIntro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- 1 Introduction -- 1.1 Ultrathin Metal Films -- 1.2 Thin Indium Films on Si(111) -- 1.3 In/Si(111) Surface Superstructures -- 1.4 Bonding Between Metal Layers and Substrates -- 1.5 Outline of the Thesis -- References -- 2 Experimental Methods -- 2.1 Low-Energy Electron Diffraction (LEED) -- 2.1.1 Kinematic Theory -- 2.1.2 Dynamical Theory -- 2.1.3 Apparatus -- 2.2 Scanning Tunneling Microscopy (STM) -- 2.2.1 Theory and Apparatus -- 2.3 Angle-Resolved Photoelectron Spectroscopy (ARPES) -- 2.3.1 Theory -- 2.3.2 Apparatus -- 2.4 Four-Point-Probe (4PP) Conductivity Measurements -- 2.4.1 Theory and Apparatus -- 2.5 Experiments -- 2.5.1 Chamber 1 (ARPES, LEED) -- 2.5.2 Chamber 2 (ARPES, LEED) -- 2.5.3 Chamber 3 (STM) -- 2.5.4 Chamber 4 (4PP Conductivity Measurements, LEED) -- 2.5.5 Chamber 5 (LEED) -- 2.5.6 Samples -- References -- 3 Structure and Electronic Properties of In Single-Layer Metal on Si(111) -- 3.1 Introduction -- 3.2 Preparation of the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Hex and left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Striped Phases -- 3.3 The Atomic Structure of the In/Si(111) ``left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )''-Hex Phase -- 3.3.1 LEED and STM Observations -- 3.3.2 Structure Model -- 3.3.3 First-Principles Calculation -- 3.4 Electronic Structure and Phase Transition of the Indium Monolayer on Si(111) -- 3.4.1 Electronic Structure of the In/Si(111) Hex Phase -- 3.4.2 Phase Transition of the In/Si(111) Hex Phase -- 3.5 Summary -- References -- 4 Structure and Electronic Properties of Ultrathin (In, Mg) Films on Si(111) -- 4.1 Introduction. 327 $a4.2 Structure Change by Mg Deposition onto the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Rect Phase -- 4.2.1 LEED and STM Observations -- 4.2.2 Structure Determination by First-Principles Calculation -- 4.3 The Electronic Structure of the (In, Mg)/Si(111) left parenthesis StartRoot 3 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt3 timessqrt3 ) Phase -- 4.3.1 ARPES Experiments -- 4.3.2 Band Calculation -- 4.4 Summary -- References -- 5 Conclusions -- Appendix Curriculum Vitae. 410 0$aSpringer theses. 606 $aMetallic films 606 $aSemiconductor films 615 0$aMetallic films. 615 0$aSemiconductor films. 676 $a621.38171 700 $aTerakawa$b Shigemi$01265780 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 912 $a996499863903316 996 $aStructure and Electronic Properties of Ultrathin in Films on Si(111)$92968231 997 $aUNISA