LEADER 04719nam 2200493 450 001 996475870103316 005 20221215145707.0 010 $a981-19-0436-7 035 $a(MiAaPQ)EBC7001201 035 $a(Au-PeEL)EBL7001201 035 $a(CKB)22894763300041 035 $a(PPN)26914823X 035 $a(EXLCZ)9922894763300041 100 $a20221215d2022 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aIII-Nitride LEDs $efrom UV to green /$fShengjun Zhou and Sheng Liu 210 1$aGateway East, Singapore :$cSpringer,$d[2022] 210 4$d©2022 215 $a1 online resource (244 pages) 225 1 $aAdvances in Optics and Optoelectronics. 311 08$aPrint version: Zhou, Shengjun III-Nitride LEDs Singapore : Springer,c2022 9789811904356 320 $aIncludes bibliographical references and index. 327 $aIntro -- Preface -- Contents -- 1 Physics of III-Nitride Light-Emitting Diodes -- 1.1 History of III-Nitride LEDs -- 1.2 Mechanisms of III-Nitride LEDs -- 1.3 Radiative Recombination and Non-radiative Recombination -- 1.4 Internal Quantum Efficiency -- 1.5 Light Extraction Efficiency and External Quantum Efficiency -- References -- 2 Epitaxial Growth of III-Nitride LEDs -- 2.1 III-Nitride Blue LEDs -- 2.2 III-Nitride Green LEDs -- 2.2.1 InGaN/GaN Superlattice -- 2.2.2 Stacked GaN/AlN Last Quantum Barrier -- 2.3 III-Nitride Ultraviolet LEDs -- 2.3.1 Sputtered AlN Nucleation Layer -- 2.3.2 Effect of PSS on UV LED -- 2.3.3 Patterned Sapphire with Silica Array -- 2.3.4 Isoelectronic Doping -- 2.3.5 InAlGaN/AlGaN Electron Blocking Layer -- 2.3.6 Graded Al-Content AlGaN Insertion Layer -- References -- 3 High-Efficiency Top-Emitting III-Nitride LEDs -- 3.1 Light Extraction Microstructure -- 3.1.1 PSS and Patterned ITO -- 3.1.2 Double Layer ITO -- 3.1.3 3D Patterned ITO and Wavy Sidewalls -- 3.1.4 Roughened Sidewalls -- 3.1.5 Air Voids Structure -- 3.2 Current Blocking Layer -- 3.2.1 SiO2 Current Blocking Layer -- 3.2.2 Patterned Current Blocking Layer -- 3.2.3 Reflective Current Blocking Layer -- 3.3 Back Reflector -- 3.4 Low Optical Loss Electrode Structure -- 3.5 Ni/Au Wire Grid Transparent Conductive Electrodes -- References -- 4 Flip-Chip III-Nitride LEDs -- 4.1 Via-Hole-Based Two-Level Metallization Electrodes -- 4.2 Dielectric DBR -- 4.3 Comparison of Flip-Chip LEDs and Top-Emitting LEDs -- 4.4 Ag/TiW, Ni/Ag and ITO/DBR Ohmic Contacts -- 4.5 High-Power Flip-Chip LEDs -- 4.6 Double-Layer Electrode and Hybrid Reflector -- 4.7 Mini/Micro-LED -- 4.7.1 Prism-Structured Sidewall of Mini-LED -- 4.7.2 Light Extraction Analysis of Micro-LED -- References -- 5 High Voltage and Vertical LEDs -- 5.1 Direct Current High Voltage LED. 327 $a5.2 Alternating Current High Voltage LED -- 5.3 Comparison of DC-HV LED and AC-HV LED -- 5.4 Vertical LEDs -- References -- 6 Device Reliability and Measurement -- 6.1 Influence of Dislocation Density on Device Reliability -- 6.2 Forward Leakage Current -- 6.3 Reverse Leakage Current -- 6.4 Pad Luster Consistency -- 6.5 Transient Measurement of LED Characteristic Parameters -- References. 330 $aThis book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the authors team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs. 410 0$aAdvances in Optics and Optoelectronics. 606 $aNitrides 606 $aLight emitting diodes 615 0$aNitrides. 615 0$aLight emitting diodes. 676 $a621.381522 700 $aZhou$b Shengjun$f1958-$01270974 702 $aLiu$b Sheng 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a996475870103316 996 $aIII-Nitride LEDs$92994190 997 $aUNISA