LEADER 03290oam  2200457   450 
001 996466751903316
005 20210615104123.0
010   $a981-15-6912-6
024 7 $a10.1007/978-981-15-6912-8
035   $a(CKB)4100000011715873
035   $a(DE-He213)978-981-15-6912-8
035   $a(MiAaPQ)EBC6452841
035   $a(PPN)25325163X
035   $a(EXLCZ)994100000011715873
100   $a20210615d2021      uy             0
101 0 $aeng
135   $aurnn|008mamaa
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aEmerging non-volatile memory technologies $ephysics, engineering, and applications /$fWen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya, editors
205   $a1st ed. 2021.
210  1$aSingapore :$cSpringer,$d[2021]
210  4$d©2021
215   $a1 online resource (VIII, 438 p. 254 illus., 231 illus. in color.) 
311   $a981-15-6910-X 
327   $aMicrowave Oscillators and Detectors Based on Magnetic Tunnel Junctions -- Spin Transfer Torque Magnetoresistive Random Access Memory -- Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications -- Electric-field-controlled MRAM: Physics and Applications -- Chiral Magnetic Domain Wall & Skyrmion Memory Devices -- Circuit Design for Non-volatile Magnetic Memory -- Domain Wall Programmable Magnetic Logic -- 3D Nanomagnetic Logic -- Spintronics for Neuromorphic Engineering -- Resistive Random Access Memory: Device Physics and Array Architectures -- RRAM Characterization and Modelling -- RRAM-based Neuromorphic Computing Systems -- An Automatic Sound Classification Framework with Non-Volatile Memory.
330   $aThis book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
606   $aNonvolatile random-access memory$xTechnological innovations
615  0$aNonvolatile random-access memory$xTechnological innovations.
676   $a621.39732
702   $aLew$b Wen Siang
702   $aLim$b Gerard Joseph
702   $aDananjaya$b Putu Andhita
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bUtOrBLW
906   $aBOOK
912   $a996466751903316
996   $aEmerging non-volatile memory technologies$92831742
997   $aUNISA