LEADER 04318nam 22006375 450 001 996418193503316 005 20200701005230.0 010 $a3-030-35993-X 024 7 $a10.1007/978-3-030-35993-5 035 $a(CKB)5300000000003422 035 $a(DE-He213)978-3-030-35993-5 035 $a(MiAaPQ)EBC6126751 035 $a(PPN)243226047 035 $a(EXLCZ)995300000000003422 100 $a20200302d2020 u| 0 101 0 $aeng 135 $aurnn#008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aCharge Transport in Low Dimensional Semiconductor Structures$b[electronic resource] $eThe Maximum Entropy Approach /$fby Vito Dario Camiola, Giovanni Mascali, Vittorio Romano 205 $a1st ed. 2020. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2020. 215 $a1 online resource (XVI, 337 p. 83 illus., 23 illus. in color.) 225 1 $aThe European Consortium for Mathematics in Industry ;$v31 311 $a3-030-35992-1 327 $aBand Structure and Boltzmann Equation -- Maximum Entropy Principle -- Application of MEP to Charge Transport in Semiconductors -- Application of MEP to Silicon -- Some Formal Properties of the Hydrodynamical Model -- Quantum Corrections to the Semiclassical Models -- Mathematical Models for the Double-Gate MOSFET -- Numerical Method and Simulations -- Application of MEP to Charge Transport in Graphene. 330 $aThis book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students. 410 0$aThe European Consortium for Mathematics in Industry ;$v31 606 $aMathematical physics 606 $aApplied mathematics 606 $aEngineering mathematics 606 $aNanotechnology 606 $aMathematical Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/M35000 606 $aTheoretical, Mathematical and Computational Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P19005 606 $aMathematical and Computational Engineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T11006 606 $aNanotechnology$3https://scigraph.springernature.com/ontologies/product-market-codes/Z14000 615 0$aMathematical physics. 615 0$aApplied mathematics. 615 0$aEngineering mathematics. 615 0$aNanotechnology. 615 14$aMathematical Physics. 615 24$aTheoretical, Mathematical and Computational Physics. 615 24$aMathematical and Computational Engineering. 615 24$aNanotechnology. 676 $a621.3815284 700 $aCamiola$b Vito Dario$4aut$4http://id.loc.gov/vocabulary/relators/aut$0947750 702 $aMascali$b Giovanni$4aut$4http://id.loc.gov/vocabulary/relators/aut 702 $aRomano$b Vittorio$4aut$4http://id.loc.gov/vocabulary/relators/aut 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a996418193503316 996 $aCharge Transport in Low Dimensional Semiconductor Structures$92141812 997 $aUNISA