LEADER 05240nam 2200613Ia 450 001 9910130882103321 005 20170810192759.0 010 $a1-283-37037-9 010 $a9786613370372 010 $a3-527-62906-8 010 $a3-527-62905-X 035 $a(CKB)3460000000000050 035 $a(EBL)700955 035 $a(OCoLC)818852671 035 $a(SSID)ssj0000527514 035 $a(PQKBManifestationID)11306437 035 $a(PQKBTitleCode)TC0000527514 035 $a(PQKBWorkID)10526255 035 $a(PQKB)10623151 035 $a(MiAaPQ)EBC700955 035 $a(EXLCZ)993460000000000050 100 $a20090727d2010 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aSilicon carbide$hVolume 1$iGrowth, defects, and novel applications$b[electronic resource] /$fedited by Peter Friedrichs ... [et al.] 210 $aWeinheim, Germany $cWiley-WCH$dc2010 215 $a1 online resource (530 p.) 300 $aDescription based upon print version of record. 311 $a3-527-40953-X 320 $aIncludes bibliographical references and index. 327 $aSilicon Carbide: Volume 1: Growth, Defects, and Novel Applications; Contents; Preface; List of Contributors; Volume 1 Silicon Carbide: Growth, Defects, and Novel Applications; Part A Growth of SiC; 1 Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution; 1.1 Introduction; 1.2 Experiments; 1.3 Results and discussions; 1.4 Spatial distribution of dislocations in SiC; 1.5 Conclusions; References; 2 Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds; 2.1 Introduction 327 $a2.2 Search for stable rhombohedral facets in 6H- and 4H-SiC2.3 PVT growth of bulk 6H- and 4H-SiC on rhombohedral (011n) facets; 2.4 Homoepitaxial Liquid Phase Epitaxy growth on basal and rhombohedral plane seeds; 2.5 Conclusions; References; 3 Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique; 3.1 Introduction; 3.2 Experimental; 3.3 Formation of extended defects in 4H-SiC epitaxial growth; 3.4 Fast epitaxial growth of 4H-SiC; 3.5 Conclusions; References; 4 Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects 327 $a4.1 Introduction4.2 Reduction of planar defects in 3C-SiC; 4.3 Performance of vertical MOSFETs; 4.4 Conclusions; References; Part B Characterization of Defects and Material Properties; 5 Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches; 5.1 Introduction; 5.2 Assessing the identity of defects in SiC; 5.3 Vacancy-related defects; 5.4 Vacancy aggregation and its consequences; 5.5 Carbon interstitial-related defects and high-frequency vibrations; 5.6 The carbon aggregation and its implications 327 $a5.7 Summary and outlookReferences; 6 EPR identification of intrinsic defects in SiC; 6.1 Introduction; 6.2 Isolated vacancy; 6.3 Pulsed ELDOR of TV2a: Observation of missing central line; 6.4 Divacancy; 6.5 Antisites and antisite-vacancy pairs; 6.6 Conclusion; References; 7 Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide; 7.1 Introduction; 7.2 Experimental; 7.3 Electrical characterization; 7.4 Topographical characterization; 7.5 Summary; References; 8 Optical properties of as-grown and process-induced stacking faults in 4H-SiC; 8.1 Introduction 327 $a8.2 Structural aspects8.3 Imaging techniques; 8.4 Optical SFs signature; 8.5 More realistic type-II QW model; 8.6 Transfer matrix method; 8.7 Focussing on a single QW; 8.8 Conclusions; References; 9 Characterization of defects in silicon carbide by Raman spectroscopy; 9.1 Introduction; 9.2 Experimental setup; 9.3 Polytype conversion in 3C-SiC grown by chemical vapor deposition; 9.4 Electronic Raman studies of shallow donors in silicon carbide; 9.5 Graphene layers on SiC-surfaces; 9.6 Summary; References 327 $a10 Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation 330 $aThis book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon.The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a s 606 $aSilicon carbide 606 $aSemiconductors 608 $aElectronic books. 615 0$aSilicon carbide. 615 0$aSemiconductors. 676 $a621.38152 701 $aFriedrichs$b Peter$0923338 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910130882103321 996 $aSilicon carbide$92072103 997 $aUNINA LEADER 01562nam 2200385 n 450 001 996394459603316 005 20200824121808.0 035 $a(CKB)4940000000120166 035 $a(EEBO)2240911192 035 $a(UnM)99825518e 035 $a(UnM)99825518 035 $a(EXLCZ)994940000000120166 100 $a19941017d1700 uy | 101 0 $aeng 135 $aurbn||||a|bb| 200 14$aThe Psalm-singer's necessary companion$b[electronic resource] $ebeing, a collection of most single and double Psalm-tunes now in use, with full directions how to sing them; with the bassus, counters, trebles and medius's. Composed by able masters. First collected for private use, and now printed for publick good 205 $aThe second edition. 210 $aLondon $cprinted by J. Heptinstall, for Henry Rhodes at the Star near Bride-Lane in Fleetstreet$d1700 215 $a[8], 159, [1] p., folded plate $cill. (metal cut), music 300 $aThe frontispiece is signed: F.H. Van Hove. sculp:. 300 $aReproduction of the original in the British Library. 330 $aeebo-0018 606 $aTune-books$vEarly works to 1800 606 $aSinging$xInstruction and study$vEarly works to 1800 615 0$aTune-books 615 0$aSinging$xInstruction and study 702 $aHove$b Frederick Hendrick van$f1628?-1698, 801 0$bCu-RivES 801 1$bCu-RivES 801 2$bCStRLIN 801 2$bWaOLN 906 $aBOOK 912 $a996394459603316 996 $aThe Psalm-singer's necessary companion$92350129 997 $aUNISA