LEADER 00854cam0 2200265 450 001 E600200067504 005 20210901114039.0 100 $a20101019d1956 |||||ita|0103 ba 101 $ager 102 $aDE 200 1 $aMärchen$fOscar Wilde 210 $aMünchen$cGoldmann Verlag$d1956 215 $a172 p.$d18 cm 225 2 $aGoldmanns gelbe taschenbücher$v398 410 1$1001LAEC00028887$12001 $a*Goldmanns gelbe taschenbücher$v398 700 1$aWilde$b, Oscar$3A600200032584$4070$0118841 801 0$aIT$bUNISOB$c20210901$gRICA 850 $aUNISOB 852 $aUNISOB$j820$m152108 912 $aE600200067504 940 $aM 102 Monografia moderna SBN 941 $aM 957 $a820$b002793$gSi$d152108$rdono Corrado$1catenacci$2UNISOB$3UNISOB$420101019072916.0$520150611082958.0$6Alfano 996 $aMärchen$91703105 997 $aUNISOB LEADER 04736nam 2200445 450 001 9910483543203321 005 20211020060835.0 010 $a3-030-68940-9 035 $a(CKB)5590000000442450 035 $a(MiAaPQ)EBC6533397 035 $a(Au-PeEL)EBL6533397 035 $a(OCoLC)1244535525 035 $a(PPN)254726771 035 $a(EXLCZ)995590000000442450 100 $a20211020d2021 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aHighly integrated gate drivers for Si and GaN power transistors /$fAchim Seidel, Bernhard Wicht 210 1$aCham, Switzerland :$cSpringer,$d[2021] 210 4$d©2021 215 $a1 online resource (xvii, 124 pages) $cillustrations 311 $a3-030-68939-5 320 $aIncludes bibliographical references and index. 327 $aIntro -- Preface -- Contents -- Acronyms -- List of Abbreviations -- List of Symbols -- 1 Introduction -- 1.1 Motivation -- 1.2 Scope and Outline of This Book -- References -- 2 Fundamentals -- 2.1 Gate Drivers and Power Stages -- 2.1.1 Driver Configurations and Building Blocks -- 2.1.2 Gate Driver Output Stage -- 2.1.3 Basic Gate Driver Operation -- 2.1.4 Gate Loop Parasitics -- 2.1.5 Buffer Capacitor CDRV -- 2.1.6 Gate Driver Types -- 2.1.7 Efficiency of Resonant and Non-resonant Gate Drivers -- 2.1.8 Power-Transistor Switching Losses -- 2.2 Power Transistors and Applications -- 2.2.1 Silicon Transistors -- 2.2.2 GaN Transistor -- 2.2.3 GaN Versus Silicon Transistors -- 2.2.3.1 Losses -- 2.2.3.2 Safe-Operating Area (SOA) -- 2.2.3.3 Gate Control -- 2.2.3.4 Applications -- 2.3 Gate Drive Schemes -- 2.3.1 Unipolar and Bipolar Gate Drive Scheme -- 2.3.2 Multi-level Gate Drive Schemes and Active Gate Control -- 2.4 Gate Driver Supply and Signal Transmission -- 2.4.1 Isolated and Non-isolated Gate Driver Supplies -- 2.4.2 Bootstrap Driver Supply -- 2.4.3 Signal Transmission -- 2.4.4 Combined Driver Supply and Signal Transmission -- 2.4.5 Coupling Currents Between Low-Side and High-Side -- Appendix A: Exemplary Gate Loop Inductance Values -- Appendix B: Losses Caused by Coss -- References -- 3 Gate Drivers Based on High-Voltage Charge Storing (HVCS) -- 3.1 The Concept of HVCS -- 3.2 Circuit Options of a Gate Driver Output Stage Based on HVCS -- 3.3 Driver Implementation -- 3.3.1 Charge Pump Concept -- 3.3.2 Series Regulator -- 3.3.3 Level Shifters -- 3.3.3.1 Level Up Shifter -- 3.3.3.2 Level Down Shifter -- 3.3.4 Gate Driver Circuit -- 3.4 Further Applications of the Proposed Bootstrap Circuit -- 3.5 Bootstrap Capacitor Sizing -- 3.5.1 Sizing Equations -- 3.5.2 Sizing Equations for Stacked Bootstrap Capacitors -- 3.5.3 Sizing Example. 327 $a3.5.4 Comparison with Conventional Bootstrap Circuit -- 3.6 Experimental Results -- 3.7 Comparison with Prior Art -- Appendix: Level Shifter Circuit -- References -- 4 Gate Drivers Based on High-Voltage Energy Storing (HVES) -- 4.1 The Concept of HVES -- 4.1.1 Gate Charge Delivery -- 4.1.2 Gate Drive Speed -- 4.1.3 Efficiency Considerations of Buffer Implementation Methods -- 4.1.4 Bootstrap Capacitor Voltage Clamping -- 4.1.5 Design Scenarios with HVES -- 4.1.6 Bipolar Gate Drive Operation -- 4.2 Gate Driver Implementation -- 4.2.1 Gate Driver Architectures -- 4.2.2 Gate Driver Implementation for a Non-isolated and an Isolated Supply -- 4.2.3 Operation as High-Side Gate Driver -- 4.2.4 GaN GIT Support -- 4.2.5 Driver Sub-circuits -- 4.2.5.1 VHV Control -- 4.2.5.2 ``MHVx Control'' and Active Rectifier -- 4.2.5.3 Level Shifter -- 4.3 Experimental Results -- 4.4 State-of-the-Art Comparison and Limitations -- 4.4.1 Limitations of Gate Drivers Based on HVES -- 4.4.2 HVES Versus HVCS and Conventional Gate Drivers -- 4.4.3 Comparison with Prior Art -- References -- 5 Gate Drivers for Large Gate Loops Based on HVES -- 5.1 Introduction -- 5.2 Concept -- 5.3 Implementation -- 5.4 Experimental Results and Comparison to Prior Art -- References -- 6 Outlook and Future Work -- 6.1 Gate Drivers Based on High-Voltage Charge Storing (HVCS) -- 6.2 Gate Drivers Based on High-Voltage Energy Storing (HVES) -- 6.3 Gate Drivers for Large Gate Loops -- 6.4 Boost Converter High-Side Driver Supply -- References -- 7 Conclusion -- References -- Index. 606 $aPower transistors 615 0$aPower transistors. 676 $a621.38412 700 $aSeidel$b Achim$01229793 702 $aWicht$b B$g(Bernhard),$f1970- 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910483543203321 996 $aHighly integrated gate drivers for Si 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