LEADER 01822nam 2200361 450 001 996279884703316 005 20231206041513.0 035 $a(CKB)1000000000035473 035 $a(NjHacI)991000000000035473 035 $a(EXLCZ)991000000000035473 100 $a20231206d2003 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aANSI N42.31-2003 $eAmerican National Standard for Measurement Procedures for Resolution and Efficiency of Wide-Band Gap Semiconductor Detectors of Ionizing Radiation /$fIEEE 210 1$aNew York :$cIEEE,$d[2003] 215 $a1 online resource (vii, 33 pages) $cillustrations 300 $aIncludes index. 311 $a0-7381-3799-5 330 $aStandard measurement and test procedures are established for wide-bandgap semiconductor detectors such as cadmium telluride (CdTe), cadmium-zinc-telluride (CdZnTe), and mercuric iodide (HgI2) that can be used at room temperature for the detection and quantitative characterization of gamma-rays, X-rays, and charged particles. Standard terminology and descriptions of the principal features of the detectors are included. Included in this standard is an annex on interfering electromagnetic noise, which is a factor in such measurements. 517 $aANSI N42.31-2003: American National Standard for Measurement Procedures for Resolution and Efficiency of Wide-Band Gap Semiconductor Detectors of Ionizing Radiation 606 $aIonizing radiation 615 0$aIonizing radiation. 676 $a539.2 712 02$aInstitute of Electrical and Electronics Engineers, 801 0$bNjHacI 801 1$bNjHacl 906 $aDOCUMENT 912 $a996279884703316 996 $aANSI N42.31-2003$92580858 997 $aUNISA