LEADER 01871nam 2200397 450 001 996279838603316 005 20230425160253.0 010 $a1-5090-3416-1 035 $a(CKB)3710000001361586 035 $a(NjHacI)993710000001361586 035 $a(EXLCZ)993710000001361586 100 $a20230425d2016 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$a2016 14th International Baltic Conference on Atomic Layer Deposition (BALD) /$fInstitute of Electrical and Electronics Engineers (IEEE) 210 1$aPiscataway, New Jersey :$cInstitute of Electrical and Electronics Engineers (IEEE),$d2016. 215 $a1 online resource (various pagings) $cillustrations 311 $a1-5090-3417-X 330 $aBALD 2016 will provide possibilities to publish results of recent studies on atomic layer deposition (ALD) and to initiate and support collaboration between research groups working in this field and applications from advanced electronics, microsystems, and displays to energy capture and storage, solid state lighting, biotechnology, security, and consumer products particularly for any advanced technologies that require control of film structure in the nanometer or sub nanometer scale. 517 $a2016 14th International Baltic Conference on Atomic Layer Deposition 606 $aAtomic layer deposition 606 $aAtomic layer deposition$vCongresses 606 $aElectronics$vCongresses 615 0$aAtomic layer deposition. 615 0$aAtomic layer deposition 615 0$aElectronics 676 $a621.381 801 0$bNjHacI 801 1$bNjHacl 906 $aPROCEEDING 912 $a996279838603316 996 $a2016 14th International Baltic Conference on Atomic Layer Deposition (BALD)$92498660 997 $aUNISA