LEADER 00929nam0-2200301 --450 001 9910473758103321 005 20210527112953.0 010 $a978-88-339-2010-8 020 $aIT$b2009-7623 100 $a20210527d2009----kmuy0itay5050 ba 101 0 $aita 102 $aIT 105 $ay 001yy 200 1 $aAtomi nuclei particelle$escritti divulgativi ed espositivi, 1923-1952$fEnrico Fermi$ga cura di Vincenzo Barone 210 $aTorino$cBollati Boringhieri$d2009 215 $aLXXV, 174 p.$d20 cm 225 1 $aUniversale Bollati Boringhieri$v583 610 0 $aTeorie e fisica matematica 676 $a530.1$v23$zita 700 1$aFermi,$bEnrico$0746 702 1$aBarone,$bVincenzo$f<1964- > 801 0$aIT$bUNINA$gREICAT$2UNIMARC 901 $aBK 912 $a9910473758103321 952 $a60 530.1 FERE 2009$b216/2021$fFAGBC 959 $aFAGBC 996 $aAtomi nuclei particelle$91110391 997 $aUNINA LEADER 01532nam 2200349 450 001 996279748703316 005 20231206214316.0 010 $a1-5044-0414-9 024 7 $a10.1109/IEEESTD.1980.7434529 035 $a(CKB)3710000000614482 035 $a(NjHacI)993710000000614482 035 $a(EXLCZ)993710000000614482 100 $a20231206d1980 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aANSI/IEEE Std 662-1980 $eIEEE Standard Terminology for Semiconductor Memory /$fInstitute of Electrical and Electronics Engineers 210 1$a[Place of publication not identified] :$cIEEE,$d1980. 215 $a1 online resource 330 $aThe purpose of this standard is to provide guidelines under which data sheets for new semiconductor memories are to be generated. Adherence to these guidelines should produce data sheets that are concise and consistently define the operation and characteristics of semiconductor memory devices. It is not intended that data sheets already in existence be changed to this format. However, data sheets being generated for the first time for new products should adhere to this standard. 517 $aANSI/IEEE Std 662-1980 606 $aSemiconductor storage devices 615 0$aSemiconductor storage devices. 676 $a004.5 801 0$bNjHacI 801 1$bNjHacl 906 $aDOCUMENT 912 $a996279748703316 996 $aANSI$92072434 997 $aUNISA