LEADER 01525oam 2200397zu 450 001 996213511203316 005 20210807003532.0 035 $a(CKB)111055184250272 035 $a(SSID)ssj0000454445 035 $a(PQKBManifestationID)12192113 035 $a(PQKBTitleCode)TC0000454445 035 $a(PQKBWorkID)10398051 035 $a(PQKB)10290798 035 $a(NjHacI)99111055184250272 035 $a(EXLCZ)99111055184250272 100 $a20160829d2001 uy 101 0 $aeng 135 $aur||||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$a2001 IEEE International SOI Conference Proceedings 210 31$a[Place of publication not identified]$cI E E E$d2001 215 $a1 online resource (x, 158 pages) $cillustrations 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a0-7803-6739-1 320 $aIncludes bibliographical references and index. 330 $aTopics covered in this volume include: double gate / vertical channel structures; SOI material science, modification, characterization, and manufacture; physics and modelling of SOI devices; and SOI circuit applications (high performance, high voltage, microwave, analog circuits). 606 $aSilicon-on-insulator technology$vCongresses 615 0$aSilicon-on-insulator technology 676 $a621.38152 801 0$bPQKB 906 $aPROCEEDING 912 $a996213511203316 996 $a2001 IEEE International SOI Conference Proceedings$92521880 997 $aUNISA