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100   $a20160829d1998      uy              
101 0 $aeng
181   $ctxt
182   $cc
183   $acr
200 10$a1998 Semiconductor and Insulating Materials Conference
210 31$a[Place of publication not identified]$cIEEE$d1998
300   $aBibliographic Level Mode of Issuance: Monograph
311   $a0-7803-4354-9 
606   $aSemiconductors$vCongresses
606   $aGallium arsenide semiconductors$vCongresses
606   $aGallium nitride$vCongresses
606   $aElectrical & Computer Engineering$2HILCC
606   $aEngineering & Applied Sciences$2HILCC
606   $aElectrical Engineering$2HILCC
615  0$aSemiconductors
615  0$aGallium arsenide semiconductors
615  0$aGallium nitride
615  7$aElectrical & Computer Engineering
615  7$aEngineering & Applied Sciences
615  7$aElectrical Engineering
676   $a621.3815/22
702   $aMiner$b C. J
702   $aLiliental-Weber$b Zuzanna
702   $aLiliental-Weber$b Zuzanna
712 02$aInstitute of Electrical and Electronics Engineers
712 12$aConference on Semiconducting and Insulating Materials
801  0$bPQKB
906   $aPROCEEDING
912   $a996212604203316
996   $a1998 Semiconductor and Insulating Materials Conference$92504939
997   $aUNISA