LEADER 01826oam 2200481zu 450 001 996206157703316 005 20210806235730.0 010 $a1-5386-0323-3 035 $a(CKB)1000000000036198 035 $a(SSID)ssj0000395446 035 $a(PQKBManifestationID)12102724 035 $a(PQKBTitleCode)TC0000395446 035 $a(PQKBWorkID)10453321 035 $a(PQKB)11331130 035 $a(EXLCZ)991000000000036198 100 $a20160829d2005 uy 101 0 $aeng 181 $ctxt 182 $cc 183 $acr 200 10$a2005 IEEE International Workshop on Memory Technology, Design and Testing : MTDT 2005 : 3-5 August, 2005, Taipei, Taiwan 210 31$a[Place of publication not identified]$cIEEE Computer Society$d2005 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a0-7695-2313-7 606 $aSemiconductor storage devices$xTesting$vCongresses 606 $aRandom access memory$vCongresses 606 $aElectrical & Computer Engineering$2HILCC 606 $aEngineering & Applied Sciences$2HILCC 606 $aElectrical Engineering$2HILCC 615 0$aSemiconductor storage devices$xTesting 615 0$aRandom access memory 615 7$aElectrical & Computer Engineering 615 7$aEngineering & Applied Sciences 615 7$aElectrical Engineering 676 $a621.39/732 712 02$aGuo li qing hua da xue (Hsinchu, Taiwan) 712 02$aIEEE Computer Society Technical Council on Test Technology. 712 12$aIEEE International Workshop on Memory Technology, Design, and Testing 801 0$bPQKB 906 $aPROCEEDING 912 $a996206157703316 996 $a2005 IEEE International Workshop on Memory Technology, Design and Testing : MTDT 2005 : 3-5 August, 2005, Taipei, Taiwan$92342593 997 $aUNISA