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100   $a20160829d1996      uy              
101 0 $aeng
135   $aur|||||||||||
181   $ctxt
182   $cc
183   $acr
200 10$a1996 IEEE International Conference on Microelectronic Test Structures
210 31$a[Place of publication not identified]$cIEEE$d1996
215   $a1 online resource (338 pages)
300   $aBibliographic Level Mode of Issuance: Monograph
311   $a0-7803-2783-7 
330   $aThe papers included in this leading international conference examine test structures for microelectronic devices, their recent progress and future directions. Included is a detailed treatment of current developments in silicon and gallium arsenide microelectronic test structure research, implementation, and applications. Also addressed are advances in device characterization, such as increased miniaturization, reduced operating voltages and reduced power requirements through improved measurement and test techniques. Topics highlighted include: Process Characterization, Dimensional Measurements, Interconnection, SOI & Material Characterization, Reliability, Device Characterization, Capacitance Measurements, Statistics.
606   $aIntegrated circuits$vCongresses
606   $aMicroelectronics$vCongresses
615  0$aIntegrated circuits
615  0$aMicroelectronics
676   $a621.3815
801  0$bPQKB
906   $aBOOK
912   $a996204464603316
996   $a1996 IEEE International Conference on Microelectronic Test Structures$92506547
997   $aUNISA