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035   $a(PQKBTitleCode)TC0000558790
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100   $a20160829d1996      uy              
101 0 $aeng
181   $ctxt
182   $cc
183   $acr
200 10$a1996 IEEE Semiconducting and Insulating Materials Conference
210 31$a[Place of publication not identified]$cIEEE$d1996
300   $aBibliographic Level Mode of Issuance: Monograph
311   $a0-7803-3179-6 
606   $aSemiconductors$xCongresses
606   $aGallium arsenide semiconductors$xCongresses
606   $aGallium nitride$xCongresses
606   $aElectrical & Computer Engineering$2HILCC
606   $aEngineering & Applied Sciences$2HILCC
606   $aElectrical Engineering$2HILCC
615  0$aSemiconductors$xCongresses
615  0$aGallium arsenide semiconductors$xCongresses
615  0$aGallium nitride$xCongresses
615  7$aElectrical & Computer Engineering
615  7$aEngineering & Applied Sciences
615  7$aElectrical Engineering
676   $a621.3815/22
702   $aFontaine$b Chantal
712 02$aInstitute of Electrical and Electronics Engineers
712 12$aConference on Semiconducting and Insulating Materials
801  0$bPQKB
906   $aBOOK
912   $a996203715803316
996   $a1996 IEEE Semiconducting and Insulating Materials Conference$92495019
997   $aUNISA