LEADER 04643nam 2200697 a 450 001 996202345903316 005 20200520144314.0 010 $a1-280-65470-8 010 $a9786610654703 010 $a0-470-36250-2 010 $a0-471-74909-5 010 $a0-471-74908-7 024 7 $a10.1002/0471749095 035 $a(CKB)1000000000355036 035 $a(EBL)275904 035 $a(SSID)ssj0000244006 035 $a(PQKBManifestationID)11188932 035 $a(PQKBTitleCode)TC0000244006 035 $a(PQKBWorkID)10164982 035 $a(PQKB)11507748 035 $a(MiAaPQ)EBC275904 035 $a(CaBNVSL)mat05237928 035 $a(IDAMS)0b00006481095e09 035 $a(IEEE)5237928 035 $a(OCoLC)163140623 035 $a(PPN)19037747X 035 $a(JP-MeL)3000111653 035 $a(Au-PeEL)EBL275904 035 $a(CaPaEBR)ebr10305091 035 $a(CaONFJC)MIL65470 035 $a(EXLCZ)991000000000355036 100 $a20050420d2006 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSemiconductor material and device characterization$b[electronic resource] /$fDieter K. Schroder 205 $a3rd ed. 210 $a[Piscataway, NJ] $cIEEE Press ;$aHoboken, N.J. $cWiley$dc2006 215 $a1 online resource (799 p.) 300 $a"Wiley-Interscience." 311 $a0-471-73906-5 320 $aIncludes bibliographical references and index. 327 $aResistivity -- Carrier and doping density -- Contact resistance and Schottky barriers -- Series resistance, channel length and width, and threshold voltage -- Defects -- Oxide and interface trapped charges, oxide thickness -- Carrier lifetimes -- Mobility -- Charge-based and probe characterization -- Optical characterization -- Chemical and physical characterization -- Reliability and failure analysis. 330 $aThis Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: . Updated and revised figures and examples reflecting the most current data and information. 260 new references offering access to the latest research and discussions in specialized topics. New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: . Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department. 606 $aSemiconductors 606 $aSemiconductors$xTesting 615 0$aSemiconductors. 615 0$aSemiconductors$xTesting. 676 $a621.3815/2 686 $a549.8$2njb/09 686 $a621.3815/2$2njb/09 700 $aSchroder$b Dieter K$0324644 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a996202345903316 996 $aSemiconductor material and device characterization$9767613 997 $aUNISA