LEADER 04528nam 2200649 450 001 996201882403316 005 20230126214444.0 010 $a1-280-34586-1 010 $a9786610345861 010 $a0-471-66091-4 010 $a0-471-66720-X 024 7 $a10.1002/047166720X 035 $a(CKB)111087027130602 035 $a(EBL)175992 035 $a(SSID)ssj0000245998 035 $a(PQKBManifestationID)11210554 035 $a(PQKBTitleCode)TC0000245998 035 $a(PQKBWorkID)10180755 035 $a(PQKB)10698615 035 $a(MiAaPQ)EBC175992 035 $a(CaBNVSL)mat05201823 035 $a(IDAMS)0b0000648104ad8b 035 $a(IEEE)5201823 035 $a(OCoLC)80242162 035 $a(PPN)257760067 035 $a(EXLCZ)99111087027130602 100 $a20040320d2004 uy 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSilicon germanium $etechnology, modeling, and design /$fRaminderpal Singh, David Harame, Modest M. Oprysko 210 1$aPiscataway, New Jersey :$cIEEE Press,$d2004. 210 2$a[Piscataqay, New Jersey] :$cIEEE Xplore,$d[2004] 215 $a1 online resource (370 p.) 300 $aDescription based upon print version of record. 311 $a0-471-44653-X 320 $aIncludes bibliographical references and index. 327 $aContributors. -- Foreword. -- Preface. -- Acknowledgments. -- Introduction. -- A Historical Perspective at IBM. -- Technology Development. -- Modeling and Characterization. -- Design Automation and Signal Integrity. -- Leading-Edge Applications. -- Appendix. -- Index. -- About the Authors. -- 330 $a"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM. 606 $aSilicon 606 $aGermanium 615 0$aSilicon. 615 0$aGermanium. 676 $a621.381528 676 $a621.39732 700 $aSingh$b Raminderpal$0845870 701 $aOprysko$b Modest Michael$f1957-$0845871 701 $aHarame$b David Louis$0845872 801 0$bCaBNVSL 801 1$bCaBNVSL 801 2$bCaBNVSL 906 $aBOOK 912 $a996201882403316 996 $aSilicon germanium$91888747 997 $aUNISA