LEADER 01806nam 2200445 450 001 996199962703316 005 20230422042128.0 035 $a(CKB)111026746754394 035 $a(SSID)ssj0000396583 035 $a(PQKBManifestationID)12162932 035 $a(PQKBTitleCode)TC0000396583 035 $a(PQKBWorkID)10343481 035 $a(PQKB)10765548 035 $a(WaSeSS)IndRDA00119474 035 $a(EXLCZ)99111026746754394 100 $a20200305d1999 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSISPAD '99 $e1999 International Conference on Simulation of Semiconductor Processes and Devices : September 6-8, 1999, Kyoto Research Park, Kyoto, Japan /$fco-sponsored by Japan Society of Applied Physics, IEEE Electron Devices Society ; in cooperation with the Institute of Electronics, Information and Communication Engineers, IEEE Electron Devices Tokyo Chapter 210 1$aPiscataway, New Jersey :$cInstitute of Electrical and Electronics Engineers,$d1999. 215 $a1 online resource (98 pages) 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a4-930813-98-0 606 $aSemiconductors$xMathematical models$vCongresses 615 0$aSemiconductors$xMathematical models 676 $a621.38152015118 712 02$aOyo Butsuri Gakkai, 712 02$aIEEE Electron Devices Society, 712 02$aDenshi Joho Tsushin Gakkai (Japan), 712 02$aInstitute of Electrical and Electronics Engineers.$bElectron Devices Group, 712 12$aInternational Conference on Simulation of Semiconductor Processes and Devices 801 0$bWaSeSS 801 1$bWaSeSS 906 $aPROCEEDING 912 $a996199962703316 996 $aSISPAD '99$92539351 997 $aUNISA