LEADER 01790oam 2200469zu 450 001 996199961803316 005 20210807003443.0 035 $a(CKB)111026746754404 035 $a(SSID)ssj0000394385 035 $a(PQKBManifestationID)12120551 035 $a(PQKBTitleCode)TC0000394385 035 $a(PQKBWorkID)10387243 035 $a(PQKB)11727951 035 $a(EXLCZ)99111026746754404 100 $a20160829d2000 uy 101 0 $aeng 181 $ctxt 182 $cc 183 $acr 200 10$aSiberian Russian Student Workshops on Electron Devices and Materials : 19-21 September 2000, Novosibirsk State Technical University, Novosibirsk, Russia : EDM 2000 210 31$a[Place of publication not identified]$cNovosibirsk State Technical University$d2000 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a5-7782-0291-1 606 $aElectronics$xMaterials$vCongresses 606 $aElectrical engineering$vCongresses 606 $aElectrical & Computer Engineering$2HILCC 606 $aElectrical Engineering$2HILCC 606 $aEngineering & Applied Sciences$2HILCC 615 0$aElectronics$xMaterials 615 0$aElectrical engineering 615 7$aElectrical & Computer Engineering 615 7$aElectrical Engineering 615 7$aEngineering & Applied Sciences 676 $a621.381 702 $aVostrikov$b A. S 702 $aGridchin$b V. A 712 02$aNovosibirskiæi gosudarstvennyæi tekhnicheskiæi universitet 801 0$bPQKB 906 $aPROCEEDING 912 $a996199961803316 996 $aSiberian Russian Student Workshops on Electron Devices and Materials : 19-21 September 2000, Novosibirsk State Technical University, Novosibirsk, Russia : EDM 2000$92506405 997 $aUNISA