LEADER 01600oam 2200421zu 450 001 996199314903316 005 20210807003510.0 035 $a(CKB)111055184243040 035 $a(SSID)ssj0000455001 035 $a(PQKBManifestationID)12210543 035 $a(PQKBTitleCode)TC0000455001 035 $a(PQKBWorkID)10397993 035 $a(PQKB)10295631 035 $a(NjHacI)99111055184243040 035 $a(EXLCZ)99111055184243040 100 $a20160829d1998 uy 101 0 $aeng 135 $aur||||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$a1998 International Symposium on Power Semiconductor Devices and IC's 210 31$a[Place of publication not identified]$cIEEE$d1998 215 $a1 online resource (500 pages) 300 $aBibliographic Level Mode of Issuance: Monograph 311 $a0-7803-4752-8 320 $aIncludes bibliographical references and index. 327 $aMaterials and Processes; CAD/Simulation; Devices; High Voltage/Power ICs; Modules and Packaging; Applications and Measurements. 330 $aThe tenth ISPSD provides a forum for technical discussion in all areas of power semiconductor devices and power ICs and their applications. 606 $aIntegrated circuits$vCongresses 615 0$aIntegrated circuits 676 $a621.3815 712 02$aIEEE, Institute of Electrical and Electronics Engineers, Inc. Staff 801 0$bPQKB 906 $aPROCEEDING 912 $a996199314903316 996 $a1998 International Symposium on Power Semiconductor Devices and IC's$92529999 997 $aUNISA