LEADER 01840oam  2200481zu 450 
001 996197570903316
005 20210806235908.0
010   $a1-5090-9829-1
035   $a(CKB)1000000000278107
035   $a(SSID)ssj0000395447
035   $a(PQKBManifestationID)12164241
035   $a(PQKBTitleCode)TC0000395447
035   $a(PQKBWorkID)10454136
035   $a(PQKB)11178292
035   $a(EXLCZ)991000000000278107
100   $a20160829d2006      uy              
101 0 $aeng
181   $ctxt
182   $cc
183   $acr
200 10$a2006 IEEE International Workshop on Memory Technology, Design, and Testing : 2-4 August 2006, Taipei, Taiwan : proceedings
210 31$a[Place of publication not identified]$cIEEE Computer Society$d2006
300   $aBibliographic Level Mode of Issuance: Monograph
311   $a0-7695-2572-5 
606   $aSemiconductor storage devices$xTesting$vCongresses
606   $aRandom access memory$vCongresses
606   $aElectrical & Computer Engineering$2HILCC
606   $aEngineering & Applied Sciences$2HILCC
606   $aElectrical Engineering$2HILCC
615  0$aSemiconductor storage devices$xTesting
615  0$aRandom access memory
615  7$aElectrical & Computer Engineering
615  7$aEngineering & Applied Sciences
615  7$aElectrical Engineering
676   $a621.39/732
712 02$aIEEE Computer Society Technical Council on Test Technology.
712 02$aIEEE Computer Society Technical Committee on VLSI,
712 12$aIEEE International Workshop on Memory Technology, Design, and Testing
801  0$bPQKB
906   $aPROCEEDING
912   $a996197570903316
996   $a2006 IEEE International Workshop on Memory Technology, Design, and Testing : 2-4 August 2006, Taipei, Taiwan : proceedings$92316454
997   $aUNISA