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200 1 $aMosfet in circuit design$emetal-oxide- semiconductor field-effects transistors for discrete and integratedcircuit technology$fRobert H. Crawford
210   $aNew York [etc.]$cMc Graw-Hill$d1967
215   $aXIII, 146 p.$d25 cm
225 2 $aTexas instruments electronics series
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606 0 $aCircuiti integrati$2BNCF
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700  1$aCRAWFORD,$bRobert H.$0168999
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996   $aMOSFET in circuit design$9189652
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