LEADER 01239nam--2200397---450- 001 990003387330203316 005 20100415100348.0 010 $a972-27-0874-0 035 $a000338733 035 $aUSA01000338733 035 $a(ALEPH)000338733USA01 035 $a000338733 100 $a20100415d1998----km-y0itay50------ba 101 $apor 102 $aPT 105 $a||||||||001yy 200 1 $aCartas entre Fernando Pessoa e os directores da presença$fediçao e estudo de Enrico Martines 210 $aLisboa$cImpr. Nac. - Casa da Moeda$d1998 215 $a450 p.$d25 cm 225 2 $aEdição crítica de Fernando Pessoa$iEstudos$v2 410 0$12001$aEdição crítica de Fernando Pessoa$iEstudos 454 1$12001 461 1$1001-------$12001 600 0 $aPessoa, Fernando$xCorrispondenza 676 $a821.134 700 1$aPESSOA,$bFernando$0329680 702 1$aMARTINES,$bEnrico 801 0$aIT$bsalbc$gISBD 912 $a990003387330203316 951 $aII.6.A.295$b9002 DSLL 959 $aBK 969 $aDSLL 979 $aDSLL$b90$c20100415$lUSA01$h0953 979 $aDSLL$b90$c20100415$lUSA01$h1003 996 $aCartas entre Fernando Pessoa e os directores da presença$91127278 997 $aUNISA LEADER 04374nam 2200757z- 450 001 9910557142603321 005 20210501 035 $a(CKB)5400000000040632 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/68267 035 $a(oapen)doab68267 035 $a(EXLCZ)995400000000040632 100 $a20202105d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aHigh-Efficiency Crystalline Silicon Solar Cells 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 online resource (90 p.) 311 08$a3-03943-629-5 311 08$a3-03943-630-9 330 $aThis book is composed of 6 papers. The first paper reports a novel technique for the selective emitter formation by controlling the surface morphology of Si wafers. Selective emitter (SE) technology has attracted renewed attention in the Si solar cell industry to achieve an improved conversion efficiency of passivated-emitter rear-contact (PERC) cells. In the second paper, the temperature dependence of the parameters was compared through the PERC of the industrial-scale solar cells. As a result of their analysis, PERC cells showed different temperature dependence for the fill factor loss as temperatures rose. The third paper reports the effects of carrier selective front contact layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface. The results demonstrated the effects of band offset determined by band bending at the interface of the passivation layer and carrier selective front contact layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field-effect passivation. The fourth paper reports excimer laser annealing of hydrogenated amorphous silicon film for TOPCon solar cell application. This paper analyzes the crystallization of a-Si:H via excimer laser annealing (ELA) and compared this process with conventional thermal annealing. The fifth paper reports the contact mechanism between Ag-Al and Si and the change in contact resistance (Rc) by varying the firing profile. Rc was measured by varying the belt speed and peak temperature of the fast-firing furnace. The sixth paper reports a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model. 606 $aHistory of engineering and technology$2bicssc 610 $aAg/Al paste 610 $aAl:ZnO (AZO) 610 $aamorphous hydrogenated silicon film 610 $aatomic force microscopy (AFM) 610 $acarrier selective contact 610 $acontact formation 610 $acrystallinity 610 $adegradation degree 610 $adoping process 610 $adouble-diode model 610 $aexcimer laser annealing 610 $afailure rate 610 $afill factor loss analysis 610 $aFourier-transform infrared (FTIR) spectroscopy 610 $ametallization 610 $aN-doped Cu2O absorber layer 610 $aN-type bifacial solar cells 610 $anumerical electro-optical modeling 610 $ap+ emitter 610 $aparasitic resistance 610 $apassivation 610 $aPERC 610 $arear emitter heterojunction 610 $arecombination current density 610 $ascanning electron microscopy (SEM) 610 $aselective emitter 610 $asilicon tandem heterojunction solar cell 610 $asolar cell 610 $aspectroscopic ellipsometry (SE) 610 $asurface morphology 610 $atemperature dependence 610 $athermal annealing 610 $aX-ray diffraction (XRD) 615 7$aHistory of engineering and technology 700 $aCho$b Eun-Chel$4edt$01328657 702 $aLee$b Hae-Seok$4edt 702 $aCho$b Eun-Chel$4oth 702 $aLee$b Hae-Seok$4oth 906 $aBOOK 912 $a9910557142603321 996 $aHigh-Efficiency Crystalline Silicon Solar Cells$93038787 997 $aUNINA