LEADER 01496nam0-2200481---450-
001 990000069920203316
005 20000606
010   $a0-89006-749-X
035   $a0006992
035   $aUSA010006992
035   $a(ALEPH)000006992USA01
035   $a0006992
100   $a20000606d1995----|||y0itay0103----ba
101 0 $aeng
102   $aus
105   $a||||||||001yy
200 1 $aElectrical and thermal characterization of MESFETs, HEMTs, and HBTs$fRobert Anholt
210   $aBoston [etc.]$cArtech house$dc1995
215   $aX, 310 p.$d24 cm
606   $aCircuiti elettronici$xProgettazione
606   $aTransistors a effetto di campo
676   $a621.381528
700  1$aANHOLT,$bRobert$0754349
801   $aIT$bSALBC$gISBD
912   $a990000069920203316
951   $a621.381528 ANH$b14020 Ing.$c621.381528$d00000737
959   $aBK
969   $aTEC
979   $c20000914$lUSA01$h1732
979   $c20001019$lUSA01$h1055
979   $c20001019$lUSA01$h1453
979   $c20001019$lUSA01$h1500
979   $c20001019$lUSA01$h1538
979   $c20001024$lUSA01$h1514
979   $c20001027$lUSA01$h1518
979   $c20001027$lUSA01$h1523
979   $c20001110$lUSA01$h1709
979   $c20001124$lUSA01$h1207
979   $aPATTY$b90$c20010419$lUSA01$h1207
979   $c20020403$lUSA01$h1614
979   $aPATRY$b90$c20040406$lUSA01$h1606
996   $aElectrical and thermal characterization of MESFETs, HEMTs, and HBTs$91517818
997   $aUNISA