LEADER 00705nam0 2200217 450 001 000019086 005 20081110124525.0 100 $a20081110d1956----km-y0itay50------ba 101 0 $aeng 102 $aUS 105 $ay-------001yy 200 1 $aColonial policy and practice$ea comparative study of Burma and Netherlands India$fby J. S. Furnivall 210 $aNew York$cWashington Square$d1956 215 $aXII, 568 p.$d24 cm 500 10$aColonial policy and practice$932400 700 1$aFurnivall,$bJohn Sydenham$0632315 801 0$aIT$bUNIPARTHENOPE$c20081110$gRICA$2UNIMARC 912 $a000019086 951 $a124/3$b3239$cNAVA2 996 $aColonial policy and practice$932400 997 $aUNIPARTHENOPE LEADER 04999nam 2200649 a 450 001 9910807658503321 005 20240313173805.0 010 $a1-118-55766-2 010 $a1-299-31552-6 010 $a1-118-62123-9 035 $a(CKB)2560000000100633 035 $a(EBL)1143629 035 $a(OCoLC)830161630 035 $a(SSID)ssj0000833569 035 $a(PQKBManifestationID)11501405 035 $a(PQKBTitleCode)TC0000833569 035 $a(PQKBWorkID)10936111 035 $a(PQKB)10729603 035 $a(MiAaPQ)EBC1143629 035 $a(Au-PeEL)EBL1143629 035 $a(CaPaEBR)ebr10671590 035 $a(CaONFJC)MIL462802 035 $a(EXLCZ)992560000000100633 100 $a20101013d2011 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aLithography $emain techniques /$fedited by Stefan Landis 205 $a1st ed. 210 $aLondon $cISTE ;$aHoboken, N.J. $cWiley$d2011 215 $a1 online resource (405 p.) 225 1 $aISTE 300 $aAdapted and updated from Lithography published 2010 in France by Hermes Science/Lavoisier. 311 $a1-84821-202-X 320 $aIncludes bibliographical references and index. 327 $aCover; Title Page; Copyright Page; Table of Contents; Foreword; Introduction; Chapter 1. Photolithography; 1.1. Introduction; 1.2. Principles and technology of scanners; 1.2.1. Illumination; 1.2.2. The mask or reticle; 1.2.3. Projection optics; 1.2.4. Repeated projection and scanning projection; 1.3. Lithography processes; 1.3.1. Anti-reflective coating; 1.3.2. Resists; 1.3.3. Barrier layers or ""top coating""; 1.4. Immersion photolithography; 1.4.1. Immersion lithography; 1.4.2. Resolution improvement; 1.4.3. Relevance of immersion lithography; 1.4.4. Immersion liquids 327 $a1.4.5. Immersion scanners1.4.6. Immersion specific constraints and issues; 1.5. Image formation; 1.6. Lithography performances enhancement techniques; 1.6.1. Off axis illumination (OAI); 1.6.2. Optical proximity corrections (OPC); 1.6.3. Phase shift masks (PSM); 1.7. Contrast; 1.7.1. Polarized light contrast; 1.7.2. Influence of contrast on roughness; 1.8. Bibliography; Chapter 2. Extreme Ultraviolet Lithography; 2.1. Introduction to extreme ultraviolet lithography; 2.1.1. Chapter introduction 327 $a2.1.2. Extreme ultraviolet lithography: the successor of optical lithography at 248 nm and 193 nm wavelengths2.1.3. The spectral range of extreme ultraviolet; 2.1.4. Choice of wavelength and resolution limit for EUV lithography; 2.2. The electromagnetic properties of materials and the complex index; 2.2.1. Wave vector and complex index; 2.2.2. Scattering and absorption: the electromagnetic origin of the refractive index; 2.2.3. Light propagation and refractive index; 2.2.4. Reflection and transmission of a monochromatic wave; 2.3. Reflective optical elements for EUV lithography 327 $a2.3.1. The interferential mirror principle: Bragg structure2.3.2. Reflective optics: conception and fabrication; 2.3.3. Projection optics for EUV lithography; 2.4. Reflective masks for EUV lithography; 2.4.1. Different mask types; 2.4.2. Manufacturing processes for EUV masks; 2.4.3. Mask defectivity; 2.5. Modeling and simulation for EUV lithography; 2.5.1. Simulation, a conceptional tool; 2.5.2. Simulation methods; 2.6. EUV lithography sources; 2.6.1. Constitutive elements of a plasma source; 2.6.2. Specifications for an EUV source; 2.6.3. EUV sources; 2.7. Conclusion 327 $a2.8. Appendix: Kramers-Kro?nig relationship2.9. Bibliography; Chapter 3. Electron Beam Lithography; 3.1. Introduction; 3.2. Different equipment, its operation and limits: current and future solutions; 3.2.1. Gaussian beam; 3.2.2. Shaped electron beam; 3.2.3. Multi-electron beam; 3.3. Maskless photolithography; 3.3.1. Optical lithography without a mask; 3.3.2. Charged particle maskless lithography; 3.4. Alignment; 3.5. Electron-sensitive resists; 3.6. Electron-matter interaction; 3.7. Physical effect of electronic bombardment in the target; 3.7.1. Polymerizing, chemical bond breaking 327 $a3.7.2. Thermal effect 330 $a"Lithography is now a complex tool at the heart of a technological process for manufacturing micro and nanocomponents. A multidisciplinary technology, lithography continues to push the limits of optics, chemistry, mechanics, micro and nano-fluids, etc. This book deals with essential technologies and processes, primarily used in industrial manufacturing of microprocessors and other electronic components"--$cProvided by publisher. 410 0$aISTE 606 $aMicrolithography 615 0$aMicrolithography. 676 $a621.3815/31 686 $aTEC021000$2bisacsh 701 $aLandis$b Stefan$01619512 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910807658503321 996 $aLithography$94069542 997 $aUNINA