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200 10$aCharacterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation /$fD.S. Woo
210  1$aMarshall Space Flight Center, AL :$cGeorge C. Marshall Space Flight Center,$dJanuary 1982.
215   $a1 online resource (v, 12 pages, 1 unnumbered page) $cillustrations
225 1 $aNASA/CR ;$v161988
300   $a"January 1982."
320   $aIncludes bibliographical reference (page 11).
606   $aComputer aided design$2nasat
606   $aCoding$2nasat
606   $aIon implantation$2nasat
606   $aMasks$2nasat
606   $aElectron beams$2nasat
615  7$aComputer aided design.
615  7$aCoding.
615  7$aIon implantation.
615  7$aMasks.
615  7$aElectron beams.
700   $aWoo$b D. S.$01392910
712 02$aGeorge C. Marshall Space Flight Center,
712 02$aSolid State Technology Center (RCA Corporation)
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910709974503321
996   $aCharacterization of silicon-gate CMOS$93448436
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