LEADER 00921nam0 22002651i 450 001 RML0251474 005 20231121125709.0 010 $a8813185839 100 $a20121121d1995 ||||0itac50 ba 101 | $aita 102 $ait 181 1$6z01$ai $bxxxe 182 1$6z01$an 200 1 $aCodice penale pel granducato di toscana (1853) 210 $aPadova $cCedam $d1995 606 $aDiritto penale$2FIR$3RMLC090049$9I 702 1$aDa$b, passano Mario$3RMLV163283 801 3$aIT$bIT-01$c20121121 850 $aIT-FR0098 899 $aBiblioteca Area Giuridico Economica$bFR0098 912 $aRML0251474 950 0$aBiblioteca Area Giuridico Economica$d 53DSG CED08/2.005$e 53VM 0000223475 VM barcode:19548-10. - Inventario:2599VM$fA $h20010423$i20121204 977 $a 53 996 $aCodice penale pel Granducato di Toscana (1853)$91537505 997 $aUNICAS LEADER 01170nam0 22002891i 450 001 UON00106847 005 20231205102619.358 100 $a20020107d1969 |0itac50 ba 101 $aeng 102 $aUS 105 $a|||| 1|||| 200 1 $aFoundations of Thai$fEdward M. Anthony, Debora P. French, Udom Masikkhadit, Warota 210 $aAnn Arbor$cThe University of Michigan Press$d19690 215 $a2 v.$d23 cm 316 $aaltro inv. 11234$5IT-UONSI TAIIIB/001 (1-2) N 620 $aUS$dAnn Arbor (Michigan)$3UONL000025 686 $aTAI II B$cTAILANDIA - LINGUISTICA - GRAMMATICHE$2A 700 1$aANTHONY$bEdward M.$3UONV068138$0665536 701 1$aFRENCH$bDebora P.$3UONV068139$0665537 701 1$aMASIKKHADIT$bUdom$3UONV068141$0665539 701 0$aWAROTA$3UONV068140$0665538 801 $aIT$bSOL$c20240220$gRICA 899 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$2UONSI 912 $aUON00106847 950 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$dSI TAI II B 001 (1-2) N $eSI SA 11233 5 001 (1-2) N altro inv. 11234 996 $aFoundations of Thai$91306574 997 $aUNIOR LEADER 04521nam 22007935 450 001 9910412153803321 005 20250609110805.0 010 $a3-030-43869-4 024 7 $a10.1007/978-3-030-43869-2 035 $a(CKB)4100000011354749 035 $a(DE-He213)978-3-030-43869-2 035 $a(MiAaPQ)EBC6312454 035 $a(PPN)269148795 035 $a(MiAaPQ)EBC6270933 035 $a(EXLCZ)994100000011354749 100 $a20200720d2020 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aEpitaxy of Semiconductors $ePhysics and Fabrication of Heterostructures /$fby Udo W. Pohl 205 $a2nd ed. 2020. 210 1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2020. 215 $a1 online resource (XX, 535 p. 322 illus., 145 illus. in color.) 225 1 $aGraduate Texts in Physics,$x1868-4513 311 08$a3-030-43868-6 320 $aIncludes bibliographical references and index. 327 $aIntroduction -- Structural Properties of Heterostructures -- Electronic Properties of Heterostructures -- Thermodynamics of Epitaxial Layer-Growth -- Atomistic Aspects of Epitaxial Layer-Growth -- In situ Growth Monitoring -- Application of Surfactants -- Doping, Diffusion, and Contacts -- Methods of Epitaxy -- Special Growth Techniques. 330 $aThe extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today?s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. 410 0$aGraduate Texts in Physics,$x1868-4513 606 $aSemiconductors 606 $aOptical materials 606 $aElectronics$xMaterials 606 $aChemistry, Physical and theoretical 606 $aCrystallography 606 $aNanotechnology 606 $aMicrowaves 606 $aOptical engineering 606 $aSemiconductors$3https://scigraph.springernature.com/ontologies/product-market-codes/P25150 606 $aOptical and Electronic Materials$3https://scigraph.springernature.com/ontologies/product-market-codes/Z12000 606 $aPhysical Chemistry$3https://scigraph.springernature.com/ontologies/product-market-codes/C21001 606 $aCrystallography and Scattering Methods$3https://scigraph.springernature.com/ontologies/product-market-codes/P25056 606 $aNanotechnology and Microengineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T18000 606 $aMicrowaves, RF and Optical Engineering$3https://scigraph.springernature.com/ontologies/product-market-codes/T24019 615 0$aSemiconductors. 615 0$aOptical materials. 615 0$aElectronics$xMaterials. 615 0$aChemistry, Physical and theoretical. 615 0$aCrystallography. 615 0$aNanotechnology. 615 0$aMicrowaves. 615 0$aOptical engineering. 615 14$aSemiconductors. 615 24$aOptical and Electronic Materials. 615 24$aPhysical Chemistry. 615 24$aCrystallography and Scattering Methods. 615 24$aNanotechnology and Microengineering. 615 24$aMicrowaves, RF and Optical Engineering. 676 $a548.5 676 $a548.5 700 $aPohl$b Udo W$4aut$4http://id.loc.gov/vocabulary/relators/aut$0842135 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910412153803321 996 $aEpitaxy of Semiconductors$91923107 997 $aUNINA