LEADER 03355nam 2200577 450 001 9910810977803321 005 20230807214359.0 010 $a3-03826-901-8 035 $a(CKB)3710000000393525 035 $a(EBL)2008462 035 $a(SSID)ssj0001560327 035 $a(PQKBManifestationID)16193309 035 $a(PQKBTitleCode)TC0001560327 035 $a(PQKBWorkID)14825102 035 $a(PQKB)11024780 035 $a(Au-PeEL)EBL2008462 035 $a(CaPaEBR)ebr11042404 035 $a(OCoLC)908100995 035 $a(MiAaPQ)EBC2008462 035 $a(EXLCZ)993710000000393525 100 $a20150425h20152015 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aFormation of silicon nitride from the 19th to the 21st century $ea comprehensive summary and guide to the world literature /$fRaymond C. Sangster ; updated and revised by David J. Fisher 205 $aSecond edition, revised and updated. 210 1$a[Pfa?ffikon], Switzerland :$cTrans Tech Publications Ltd,$d2015. 210 4$dİ2015 215 $a1 online resource (1001 p.) 225 1 $aMaterials Science Foundations ;$vVolumes 84-85 300 $aDescription based upon print version of record. 311 $a3-03835-994-7 320 $aIncludes bibliographical references at the end of each chapters. 327 $aFormation of Silicon Nitride from the 19th to the 21st Century; Preface; Table of Contents; Part A: In the Beginning; Part B: Technical Context of Silicon Nitride Formation; Part C: Si3N4 Products, Uses and Markets; Part D: Si3N4 by Reaction of Si(cr) Surfaces and N-Species; Part E: Si3N4 Powder Formation from Si(Powder)/N2(g); Part F: Fabrication of Reaction Bonded Silicon Nitride; Part G: Si3N4 from Si/N2 under Vigorous Conditions; Part H: Si3N4 Formation by Reaction of Si with N-Compounds; Part I?: Si3N4 by Nitridation of Si-O Based Materials 327 $aPart J: Si3N4 Formation from Si-N Based MaterialsPart K: Comparative Overview and Summary of Si3N4 CVD; Part L: Si3N4 by CVD Nitridation of Si-H Compounds; Part M: Si3N4 by CVD Nitridation of Si Halides and Halosilanes; Part N: Si3N4 Formation in Si-C-N Systems; Part O: Si3N4 Formation in Si-N-X Systems, X = B, P, S, Fe, other 330 $aThe elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichiometric Si3N4. It comes in three common varieties. How they interrelate, how one finds them and (above all ) how one makes them - and how sometimes they just happen to form - are the subjects of this book, with due attention being paid to closely related matters. This revised second edition summariz 410 0$aMaterials science foundations ;$vVolumes 84-85. 606 $aSilicon nitride 615 0$aSilicon nitride. 676 $a666 700 $aSangster$b Raymond C.$01165844 702 $aFisher$b David J. 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910810977803321 996 $aFormation of silicon nitride from the 19th to the 21st century$94089252 997 $aUNINA LEADER 01115nam0 22002891i 450 001 UON00064379 005 20231205102323.505 100 $a20020107f |0itac50 ba 101 $aurd 102 $aPK 105 $a|||| 1|||| 200 1 $aBihtarin adab - 1948$fCawdhri Barakat'ali, Mirza Adib, Qatil Sifa'i 210 $aLahore$cMaktaba-e Urdu, [s. d.] 215 $a440 p.$d21 cm 620 $aPK$dLahore$3UONL000599 686 $aSI VI DA$cSubcontinente indiano - Letteratura Urdu - Critica$2A 700 1$aBARKAT'ALI$bCawdhri$3UONV041250$0656653 701 1$aADIB$bMirza$3UONV005748$0656165 701 1$aSIFA'I$bQatil$3UONV041251$0656654 712 $aMaktaba-e Urdu Lahawr$3UONV246765$4650 790 0$aMIRZA ADIB$zADIB, Mirza$3UONV085568 801 $aIT$bSOL$c20250711$gRICA 899 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$2UONSI 912 $aUON00064379 950 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$dSI SI VI DA 272 $eSI IND1473 5 272 996 $aBihtarin adab - 1948$91171222 997 $aUNIOR