LEADER 00982nam a22002771i 4500 001 991000496209707536 005 20021114105912.0 008 021012s1993 it |||||||||||||||||ita 020 $a8878351822 035 $ab1201333x-39ule_inst 035 $aARCHE-010313$9ExL 040 $aDip.to Filologia Ling. e Lett.$bita$cA.t.i. Arché s.c.r.l. Pandora Sicilia s.r.l. 082 04$a292.13 100 1 $aKerényi, Karl$0425773 245 10$aScritti italiani :$b(1955-1971) /$cKarl Kerényi ; a cura di Giampiero Moretti 260 $aNapoli :$bGuida,$c1993 300 $a208 p. ;$c23 cm 490 0$aSaggi [Guida] ;$v45 650 4$aMito 700 1 $aMoretti, Giampiero 907 $a.b1201333x$b28-04-17$c01-04-03 912 $a991000496209707536 945 $aLE008 LLI IV G 32$g1$i2008000273330$lle008$o-$pE0.00$q-$rl$s- $t0$u2$v1$w2$x0$y.i12300482$z01-04-03 996 $aScritti italiani$9551704 997 $aUNISALENTO 998 $ale008$b01-04-03$cm$da $e-$fita$git $h0$i1 LEADER 03207nam 2200889z- 450 001 9910639992603321 005 20231214133140.0 010 $a3-0365-6167-6 035 $a(CKB)5470000001633427 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/95892 035 $a(EXLCZ)995470000001633427 100 $a20202301d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aGraphene for Electronics 210 $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 electronic resource (180 p.) 311 $a3-0365-6168-4 330 $aGraphene is an allotrope of carbon consisting of a single layer of atoms arranged in a two-dimensional (2D) honeycomb lattice. Graphene's unique properties of thinness and conductivity have led to global research into its applications as a semiconductor. With the ability to well conduct electricity at room temperature, graphene semiconductors could easily be implemented into the existing semiconductor technologies and, in some cases, successfully compete with the traditional ones, such as silicon. This reprint presents very recent results in the physics of graphene, which can be important for applying the material in electronics. 606 $aPhysics$2bicssc 610 $agraphene 610 $ascattering 610 $adephasing 610 $arelaxation time 610 $aband structure 610 $atight-binding model 610 $aangle-resolved photoemission 610 $aelectron scattering 610 $aaugmented plane waves 610 $ananoscroll 610 $afirst-principle 610 $aKlein tunneling 610 $aborophene 610 $aDirac fermions 610 $aelectric field 610 $avalence charge density 610 $aimage potential 610 $aimage-plane position 610 $aimage-potential states 610 $aliquid conductor 610 $agraphene solution 610 $acirculating system 610 $amicrofluidic channel 610 $atemperature 610 $aoptical power 610 $aCVD graphene 610 $apolycrystalline 610 $agrain size 610 $asingle-crystalline grain 610 $agrain boundary (GB) 610 $aGB distribution 610 $asheet resistance 610 $atransmission-line model measurement 610 $aBose-Einstein condensation 610 $asuperfluidity 610 $adipolar exitons 610 $alow-dimensional semimetals 610 $aelectronic transport in graphene 610 $aquantum hall effect 610 $aion-selective field-effect transistor 610 $asodium ions 610 $areal-time monitoring 610 $amechanochemistry 610 $agraphene nanosheets 610 $aconductive ink 610 $ainkjet printing 610 $aprinted electronics 615 7$aPhysics 700 $aKogan$b Eugene$4edt$01302848 702 $aKogan$b Eugene$4oth 906 $aBOOK 912 $a9910639992603321 996 $aGraphene for Electronics$93026688 997 $aUNINA LEADER 00999nam0 22002651i 450 001 UON00022544 005 20231205102025.251 100 $a20020107d1945 |0itac50 ba 101 $aeng 102 $aUS 105 $a||||Y ||||| 200 1 $aˆAn ‰Atlas of the U.S.S.R. / by J.F. Horrabin and James S. Gregory 210 $aNew York$cPenguin Books$d1945 60 p. ; 18 cm 316 $amgS$5IT-UONSI ATLIX/004 620 $aUS$dNew York$3UONL000050 686 $aATL IX$cATLANTI - EX URSS$2A 700 1$aHORRABIN$bJ.F.$3UONV015192$0642271 701 1$aGREGORY$bJames S.$3UONV015193$0272448 712 $aPenguin Books$3UONV246450$4650 801 $aIT$bSOL$c20240220$gRICA 899 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$2UONSI 912 $aUON00022544 950 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$dSI ATL IX 004 $eSI MR 61901 7 004 mgS 996 $aAtlas of the U.S.S.R$91199150 997 $aUNIOR