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010   $a9786612331497
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035   $a(IEEE)5361029
035   $a(OCoLC)463436649
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100   $a20090429d2009      uy         0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 00$aReliability wearout mechanisms in advanced CMOS technologies /$fAlvin W. Strong ... [et al.]
210   $aHoboken, N.J. $cWiley$dc2009
215   $a1 online resource (642 p.)
225 1 $aIEEE Press series on microelectronic systems
300   $aDescription based upon print version of record.
311 08$a9780471731726 
311 08$a0471731722 
320   $aIncludes bibliographical references and index.
327   $aIntroduction / Alvin W. Strong -- Dielectric characterization and reliability methodology / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sun?e? -- Dielectric breakdown of gate oxides: physics and experiments / Ernest Y. Wu, Rolf-Peter Vollertsen, and Jordi Sun?e? -- Negative bias temperature instabilities in pMOSFET devices / Giuseppe LaRosa -- Hot carriers / Stewart E. Rauch, III -- Stress-induced voiding / Timothy D. Sullivan -- Electromigration / Timothy D. Sullivan.
330   $aA comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: Introduction to Reliability Gate Dielectric Reliability Negative Bias 
410  0$aIEEE Press series on microelectronic systems.
606   $aMetal oxide semiconductors, Complementary$xReliability
606   $aMicroelectronics
615  0$aMetal oxide semiconductors, Complementary$xReliability.
615  0$aMicroelectronics.
676   $a621.39732
686   $aELT 358f$2stub
686   $aZN 4960$2rvk
701   $aStrong$b Alvin Wayne$f1946-$0845570
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9911019652603321
996   $aReliability wearout mechanisms in advanced CMOS technologies$91887744
997   $aUNINA