LEADER 01128nam--2200349---450- 001 990002001820203316 005 20051109115543.0 035 $a000200182 035 $aUSA01000200182 035 $a(ALEPH)000200182USA01 035 $a000200182 100 $a20040913d1975----km-y0itay0103----ba 101 0 $aita 102 $aIT 105 $a||||||||001yy 200 1 $aCommento storico al quinto libro delle Storie di Erodoto$eintroduzione, commento storico, note complementari, testo, traduzione e indici$fBiagio Virgilio 210 $aPisa$cGiardini$d1975 215 $a305 p.$cill.$d25 cm. 225 2 $aBiblioteca degli studi classici e orientali$v4 410 0$12001$aBiblioteca degli studi classici e orientali$v4 454 1$12001 461 1$1001-------$12001 700 1$aVIRGILIO,$bBiagio$0171152 801 0$aIT$bsalbc$gISBD 912 $a990002001820203316 951 $aV.1.A. 417(VIII C coll. 109/4)$b73913 L.M.$cVIII C 959 $aBK 969 $aUMA 979 $aSIAV8$b10$c20040913$lUSA01$h1046 979 $aCOPAT6$b90$c20051109$lUSA01$h1155 996 $aHistoriae$926663 997 $aUNISA LEADER 05273nam 2200661Ia 450 001 9911019357103321 005 20200520144314.0 010 $a9786610921621 010 $a9781280921629 010 $a1280921625 010 $a9783527610723 010 $a3527610723 010 $a9783527610716 010 $a3527610715 035 $a(CKB)1000000000376984 035 $a(EBL)482231 035 $a(OCoLC)173134654 035 $a(SSID)ssj0000211439 035 $a(PQKBManifestationID)11169155 035 $a(PQKBTitleCode)TC0000211439 035 $a(PQKBWorkID)10311214 035 $a(PQKB)11033842 035 $a(MiAaPQ)EBC482231 035 $a(Perlego)2772033 035 $a(EXLCZ)991000000000376984 100 $a20061003d2007 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aNitride semiconductor devices $eprinciples and simulation /$fedited by Joachim Piprek 210 $aWeinheim $cWiley-VCH ;$a[Chichester $cJohn Wiley [distributor]]$dc2007 215 $a1 online resource (521 p.) 300 $aDescription based upon print version of record. 311 08$a9783527406678 311 08$a3527406670 320 $aIncludes bibliographical references and index. 327 $aNitride Semiconductor Devices: Principles and Simulation; Contents; Preface; List of Contributors; Part 1 Material Properties; 1 Introduction; 1.1 A Brief History; 1.2 Unique Material Properties; 1.3 Thermal Parameters; References; 2 Electron Bandstructure Parameters; 2.1 Introduction; 2.2 Band Structure Models; 2.3 Band Parameters; 2.3.1 GaN; 2.3.2 AlN; 2.3.3 InN; 2.3.4 AlGaN; 2.3.5 InGaN; 2.3.6 InAlN; 2.3.7 AlGaInN; 2.3.8 Band Offsets; 2.4 Conclusions; References; 3 Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes 327 $a3.1 Why Spontaneous Polarization in III-V Nitrides?3.2 Theoretical Prediction of Polarization Properties in AlN, GaN and InN; 3.3 Piezoelectric and Pyroelectric Effects in III-V Nitrides Nanostructures; 3.4 Polarization Properties in Ternary and Quaternary Alloys: Nonlinear Compositional Dependence and Order vs. Disorder Effects; 3.5 Orientational Dependence of Polarization; References; 4 Transport Parameters for Electrons and Holes; 4.1 Introduction; 4.2 Numerical Simulation Model; 4.2.1 Scattering in the Semi-Classical Boltzmann Equation; 4.3 Analytical Models for the Transport Parameters 327 $a4.4 GaN Transport Parameters4.4.1 Electron Transport Coefficients; 4.4.2 Hole Transport Coefficients; 4.5 AlN Transport Parameters; 4.5.1 Electron Transport Coefficients; 4.5.2 Hole Transport Coefficients; 4.6 InN Transport Parameters; 4.6.1 Electron Transport Coefficients; 4.6.2 Hole Transport Coefficients; 4.7 Conclusions; References; 5 Optical Constants of Bulk Nitrides; 5.1 Introduction; 5.2 Dielectric Function and Band Structure; 5.2.1 Fundamental Relations; 5.2.2 Valence Band Ordering, Optical Selection Rules and Anisotropy; 5.3 Experimental Results; 5.3.1 InN; 5.3.2 GaN and AlN 327 $a5.3.3 AlGaN Alloys5.3.4 In-rich InGaN and InAlN Alloys; 5.4 Modeling of the Dielectric Function; 5.4.1 Analytical Representation of the Dielectric Function; 5.4.2 Calculation of the Dielectric Function for Alloys; 5.4.3 Influence of Electric Fields on the Dielectric Function; References; 6 Intersubband Absorption in AlGaN/GaN Quantum Wells; 6.1 Introduction; 6.2 Theoretical Model; 6.2.1 Spontaneous and Piezoelectric Polarization; 6.3 Numerical Implementation; 6.3.1 Achieving Self-consistency: The Under-Relaxation Method; 6.3.2 Predictor-Corrector Approach 327 $a6.4 Absorption Energy in AlGaN-GaN MQWs6.4.1 Numerical Analysis of Periodic AlGaN-GaN MQWs; 6.4.2 Numerical Analysis of Non-periodic AlGaN-GaN MQWs and Comparison with Experimental Results; 6.5 Conclusions; References; 7 Interband Transitions in InGaN Quantum Wells; 7.1 Introduction; 7.2 Theory; 7.2.1 Bandstructure and Wavefunctions; 7.2.2 Semiconductor Bloch Equations; 7.2.3 Semiconductor Luminescence Equations; 7.2.4 Auger Recombination Processes; 7.3 Theory-Experiment Gain Comparison; 7.4 Absorption/Gain; 7.4.1 General Trends; 7.4.2 Structural Dependence; 7.5 Spontaneous Emission 327 $a7.6 Auger Recombinations 330 $aThis is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor dis 606 $aSemiconductors 606 $aNitrides 615 0$aSemiconductors. 615 0$aNitrides. 676 $a621.38152 701 $aPiprek$b Joachim$0625980 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911019357103321 996 $aNitride semiconductor devices$94416417 997 $aUNINA LEADER 01928nas 2200589-- 450 001 9910393348903321 005 20241024213016.0 035 $a(CKB)110978977280652 035 $a(CONSER)---78012693- 035 $a(EXLCZ)99110978977280652 100 $a20740606a19699999 --- a 101 0 $aeng 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 04$aThe Journal of transpersonal psychology 210 $a[Palo Alto, Calif.]$c[Transpersonal Institute, etc.] 215 $a1 online resource 300 $aRefereed/Peer-reviewed 311 08$aPrint version: The Journal of transpersonal psychology. 0022-524X (DLC) 78012693 (OCoLC)560527891 517 3 $aTranspersonal psychology 531 $aJOURNAL OF TRANSPERSONAL PSYCHOLOGY 531 0 $aJ. transpers. psychol. 606 $aPsychology$vPeriodicals 606 $aCognition$3https://id.nlm.nih.gov/mesh/D003071 606 $aMysticism$3https://id.nlm.nih.gov/mesh/D009228 606 $aPsychological Theory$3https://id.nlm.nih.gov/mesh/D011582 606 $aPsychology$3https://id.nlm.nih.gov/mesh/D011584 606 $aPsychologie$vPériodiques 606 $aPsychology$2fast$3(OCoLC)fst01081447 606 $aTranscendentie$2gtt 606 $aPsychologie$2gtt 608 $aPeriodical. 608 $aPeriodicals.$2fast 608 $aPeriodicals.$2lcgft 615 0$aPsychology 615 2$aCognition. 615 2$aMysticism. 615 2$aPsychological Theory. 615 2$aPsychology 615 6$aPsychologie 615 7$aPsychology. 615 17$aTranscendentie. 615 17$aPsychologie. 676 $a150/.5 712 02$aTranspersonal Institute. 712 02$aAmerican Transpersonal Association. 906 $aJOURNAL 912 $a9910393348903321 920 $aexl_impl conversion 996 $aJournal of Transpersonal Psychology$91319887 997 $aUNINA