LEADER 05589nam 22007454a 450 001 9911019211203321 005 20200520144314.0 010 $a9786610287482 010 $a9781280287480 010 $a1280287489 010 $a9780470013502 010 $a0470013508 010 $a9780470012901 010 $a0470012900 035 $a(CKB)1000000000356161 035 $a(EBL)242931 035 $a(OCoLC)77722510 035 $a(SSID)ssj0000149122 035 $a(PQKBManifestationID)11150968 035 $a(PQKBTitleCode)TC0000149122 035 $a(PQKBWorkID)10237076 035 $a(PQKB)11628783 035 $a(MiAaPQ)EBC242931 035 $a(Perlego)2759135 035 $a(EXLCZ)991000000000356161 100 $a20051102d2006 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aESD $ecircuits and devices /$fSteven H. Voldman 210 $aHoboken, NJ $cJohn Wiley$d2006 215 $a1 online resource (422 p.) 300 $aDescription based upon print version of record. 311 08$a9780470847534 311 08$a0470847530 320 $aIncludes bibliographical references and index. 327 $aESD; Contents; About the Author; Preface; Acknowledgements; 1 Electrostatics and Electrothermal Physics; 1.1 Introduction; 1.2 A Time Constant Approach; 1.2.1 ESD Time Constants; 1.2.2 Time Constant Hierarchy; 1.2.3 Thermal Time Constant; 1.2.4 Thermal Diffusion; 1.2.5 Adiabatic, Thermal Diffusion Time Scale and Steady State; 1.2.6 Electroquasistatics and Magnetoquasistatics; 1.3 Instability; 1.3.1 Electrical Instability; 1.3.2 Electrothermal Instability; 1.3.3 Spatial Instability and Current Constriction; 1.4 Breakdown; 1.4.1 Paschen's Breakdown Theory; 1.4.2 Townsend's Concept 327 $a1.4.3 Toepler's Law1.5 Avalanche Breakdown; 1.5.1 Breakdown in Air; 1.5.2 Air Breakdown and Peak Currents; 1.5.3 Air Breakdown and Rise Times; 1.5.4 Mesoplasmas and Microplasmas; 1.5.5 Mesoplasma Phenomena; Problems; References; 2 Electrothermal Methods and ESD Models; 2.1 Electrothermal Methods; 2.1.1 Green's Function and Method of Images; 2.1.2 Integral Transforms of the Heat Conduction Equation; 2.1.3 Flux Potential Transfer Relations Matrix Methodology; 2.1.4 Heat Equation with Variable Conductivity; 2.1.5 Duhamel Formulation; 2.2 Electrothermal Models; 2.2.1 Tasca Model 327 $a2.2.2 Wunsch-Bell Model2.2.3 Smith-Littau Model; 2.2.4 Arkihpov-Astvatsaturyan-Godovosyn-Rudenko Model; 2.2.5 Vlasov-Sinkevitch Model; 2.2.6 Dwyer-Franklin-Campbell Model; 2.2.7 Greve Model; 2.2.8 Negative Differential Resistance Model; 2.2.9 Ash Model; 2.2.10 Statistical Models; Problems; References; 3 Semiconductor Devices and ESD; 3.1 Device Physics; 3.1.1 Nonisothermal Simulation; 3.2 Diodes; 3.2.1 Diode Equation; 3.2.2 Recombination and Generation Mechanisms; 3.3 Bipolar High-current Device Physics; 3.3.1 Bipolar Transistor Equation; 3.3.2 Kirk Effect; 3.3.3 Johnson Limit 327 $a3.4 Silicon-Controlled Rectifiers3.4.1 Regenerative Feedback; 3.5 Resistors; 3.6 MOSFET High-current Device Physics; 3.6.1 Parasitic Bipolar Transistor Equation; 3.6.2 Avalanche Breakdown and Snapback; 3.6.3 Instability and Current Constriction Model; 3.6.4 Dielectric Breakdown; 3.6.5 Gate Induced Drain Leakage (GIDL); Problems; References; 4 Substrates and ESD; 4.1 Methods of Substrate Analysis; 4.2 Substrate as a Semi-infinite Domain; 4.3 Substrate as a Stratified Medium Using the Transfer Matrix Approach; 4.4 Substrate Transmission Line Model; 4.5 Substrate Lossy Transmission Line Models 327 $a4.6 Substrate Absorption, Reflection and Transmission4.7 Substrate Electrical and Thermal Discretization; 4.8 Substrate Effects: Electrical Transfer Resistance; 4.9 Substrate Effects: Thermal Transfer Resistance; 4.10 Substrate Thermal Resistance Models; 4.10.1 Variable Cross-section Model; 4.10.2 Variable Elliptical Cross-section Model; 4.10.3 Back-surface Substrate Lumped Analytical Model; 4.11 Heavily Doped Substrates; 4.12 Low-doped Substrates; Problems; References; 5 Wells, Sub-collectors and ESD; 5.1 Diffused Wells; 5.2 Retrograde and Vertically Modulated Wells; 5.2.1 Retrograde Wells 327 $a5.2.2 Retrograde Well Substrate Modulation 330 $aThis volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also address 517 3 $aCircuits and devices 606 $aIntegrated circuits$xProtection 606 $aElectronic apparatus and appliances$xProtection 606 $aStatic eliminators 606 $aElectric discharges 606 $aElectrostatics 615 0$aIntegrated circuits$xProtection. 615 0$aElectronic apparatus and appliances$xProtection. 615 0$aStatic eliminators. 615 0$aElectric discharges. 615 0$aElectrostatics. 676 $a621.381 700 $aVoldman$b Steven H$0872423 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911019211203321 996 $aESD$91958013 997 $aUNINA