LEADER 05214nam 22006854a 450 001 9911019209203321 005 20200520144314.0 010 $a9786610271870 010 $a9781280271878 010 $a1280271876 010 $a9780470353257 010 $a0470353252 010 $a9780470864340 010 $a0470864346 010 $a9780470863800 010 $a0470863803 035 $a(CKB)111087027142134 035 $a(EBL)159631 035 $a(SSID)ssj0000080397 035 $a(PQKBManifestationID)11107685 035 $a(PQKBTitleCode)TC0000080397 035 $a(PQKBWorkID)10095224 035 $a(PQKB)10707981 035 $a(MiAaPQ)EBC159631 035 $a(OCoLC)85819923 035 $a(Perlego)2757503 035 $a(EXLCZ)99111087027142134 100 $a20030314d2003 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aDevice modeling for analog and RF CMOS circuit design /$fTrond Ytterdal, Yuhua Cheng, Tor A. Fjeldly 210 $aHoboken, NJ $cWiley$dc2003 215 $a1 online resource (308 p.) 300 $aDescription based upon print version of record. 311 08$a9780471498698 311 08$a0471498696 320 $aIncludes bibliographical references and index. 327 $aDevice Modeling for Analog and RF CMOS Circuit Design; Contents; Preface; 1 MOSFET Device Physics and Operation; 1.1 Introduction; 1.2 The MOS Capacitor; 1.2.1 Interface Charge; 1.2.2 Threshold Voltage; 1.2.3 MOS Capacitance; 1.2.4 MOS Charge Control Model; 1.3 Basic MOSFET Operation; 1.4 Basic MOSFET Modeling; 1.4.1 Simple Charge Control Model; 1.4.2 The Meyer Model; 1.4.3 Velocity Saturation Model; 1.4.4 Capacitance Models; 1.4.5 Comparison of Basic MOSFET Models; 1.4.6 Basic Small-signal Model; 1.5 Advanced MOSFET Modeling; 1.5.1 Modeling Approach; 1.5.2 Nonideal Effects 327 $a1.5.3 Unified MOSFET C-V ModelReferences; 2 MOSFET Fabrication; 2.1 Introduction; 2.2 Typical Planar Digital CMOS Process Flow; 2.3 RF CMOS Technology; References; 3 RF Modeling; 3.1 Introduction; 3.2 Equivalent Circuit Representation of MOS Transistors; 3.3 High-frequency Behavior of MOS Transistors and AC Small-signal Modeling; 3.3.1 Requirements for MOSFET Modeling for RF Applications; 3.3.2 Modeling of the Intrinsic Components; 3.3.3 HF Behavior and Modeling of the Extrinsic Components; 3.3.4 Non-quasi-static Behavior; 3.4 Model Parameter Extraction 327 $a3.4.1 RF Measurement and De-embedding Techniques3.4.2 Parameter Extraction; 3.5 NQS Model for RF Applications; References; 4 Noise Modeling; 4.1 Noise Sources in a MOSFET; 4.2 Flicker Noise Modeling; 4.2.1 The Physical Mechanisms of Flicker Noise; 4.2.2 Flicker Noise Models; 4.2.3 Future Work in Flicker Noise Modeling; 4.3 Thermal Noise Modeling; 4.3.1 Existing Thermal Noise Models; 4.3.2 HF Noise Parameters; 4.3.3 Analytical Calculation of the Noise Parameters; 4.3.4 Simulation and Discussions; 4.3.5 Induced Gate Noise Issue; References; 5 Proper Modeling for Accurate Distortion Analysis 327 $a5.1 Introduction5.2 Basic Terminology; 5.3 Nonlinearities in CMOS Devices and Their Modeling; 5.4 Calculation of Distortion in Analog CMOS Circuits; References; 6 The BSIM4 MOSFET Model; 6.1 An Introduction to BSIM4; 6.2 Gate Dielectric Model; 6.3 Enhanced Models for Effective DC and AC Channel Length and Width; 6.4 Threshold Voltage Model; 6.4.1 Enhanced Model for Nonuniform Lateral Doping due to Pocket (Halo) Implant; 6.4.2 Improved Models for Short-channel Effects; 6.4.3 Model for Narrow Width Effects; 6.4.4 Complete Threshold Voltage Model in BSIM4; 6.5 Channel Charge Model 327 $a6.6 Mobility Model6.7 Source/Drain Resistance Model; 6.8 I-V Model; 6.8.1 I-V Model When rdsMod = 0 (R(DS)(V) 0); 6.8.2 I-V Model When rdsMod = 1 (R(DS)(V) = 0); 6.9 Gate Tunneling Current Model; 6.9.1 Gate-to-substrate Tunneling Current I(GB); 6.9.2 Gate-to-channel and Gate-to-S/D Currents; 6.10 Substrate Current Models; 6.10.1 Model for Substrate Current due to Impact Ionization of Channel Current; 6.10.2 Models for Gate-induced Drain Leakage (GIDL) and Gate-induced Source Leakage (GISL) Currents; 6.11 Capacitance Models; 6.11.1 Intrinsic Capacitance Models 327 $a6.11.2 Fringing/Overlap Capacitance Models 330 $aBridges the gap between device modelling and analog circuit design.Includes dedicated software enabling actual circuit design.Covers the three significant models: BSIM3, Model 9 &, and EKV.Presents practical guidance on device development and circuit implementation.The authors offer a combination of extensive academic and industrial experience. 606 $aMetal oxide semiconductors, Complementary$xComputer-aided design 615 0$aMetal oxide semiconductors, Complementary$xComputer-aided design. 676 $a621.39/5 700 $aYtterdal$b Trond$0725319 701 $aCheng$b Yuhua$f1958-$01838775 701 $aFjeldly$b Tor A$0725317 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911019209203321 996 $aDevice modeling for analog and RF CMOS circuit design$94417844 997 $aUNINA