LEADER 03825nam 22006495 450 001 9910591040603321 005 20230810234509.0 010 $a9789811944499$b(electronic bk.) 010 $z9789811944482 024 7 $a10.1007/978-981-19-4449-9 035 $a(MiAaPQ)EBC7080418 035 $a(Au-PeEL)EBL7080418 035 $a(CKB)24779144000041 035 $a(DE-He213)978-981-19-4449-9 035 $a(EXLCZ)9924779144000041 100 $a20220904d2022 u| 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDiagrams of Power in Benjamin and Foucault $eThe Recluse of Architecture /$fby Mark Laurence Jackson 205 $a1st ed. 2022. 210 1$aSingapore :$cSpringer Nature Singapore :$cImprint: Springer,$d2022. 215 $a1 online resource (342 pages) 311 08$aPrint version: Jackson, Mark Laurence Diagrams of Power in Benjamin and Foucault Singapore : Springer,c2022 9789811944482 320 $aIncludes bibliographical references. 327 $a1 Empty Links -- 2 Divinity and Violence -- 3 Being and History -- 4 The Mirror of Nothingness -- 5 Vanity of the Verb -- 6 Recluse. 330 $aThis book?s overarching premise is that discussion and critique in the discourses of architecture and urbanism have their primary focus on engagements with form, particularly in the sense of the question as to what planning and architecture signify with respect to the forms they take, and how their meanings or content (what is ?contained?) is considered in relation to form-as-container. While significant critical work in these disciplines has been published over the past 20 years that engages pertinently with the writings of Walter Benjamin and Michel Foucault, there has been no address to the co-incidence in the work of Benjamin and Foucault of an architectural figure that is pivotal to each of their discussions of the emergence of modernity: The arcade for Benjamin and the panoptic prison for Foucault have a parallel role. In Foucault?s terms, panopticism is a ?diagram of power.? The parallel, for Benjamin, would be his understanding of ?constellation.? In more recent architectural writings, the notion of the diagram has emerged as a key motif. Yet, and in as much as it supposedly relates to aspects of the work of Foucault, along with Gilles Deleuze, this notion of ?diagram? amounts, for the most part, to a thinly veiled reinstatement of geometry-as-idea. This book redresses the emphasis given to form within the cultural philosophy of modernity and?particularly with respect to architecture and urbanism?inflects on the agency of force that opens a reading of their productive capacities as technologies of power. It is relevant to students and scholars in poststructuralist critical theory, architecture, and urban studies. 606 $aPoststructuralism 606 $aPhilosophy 606 $aArchitecture$xHistory 606 $aCritical theory 606 $aArchitecture 606 $aPoststructuralism 606 $aPhilosophy 606 $aArchitectural History and Theory 606 $aCritical Theory 606 $aArchitecture 615 0$aPoststructuralism. 615 0$aPhilosophy. 615 0$aArchitecture$xHistory. 615 0$aCritical theory. 615 0$aArchitecture. 615 14$aPoststructuralism. 615 24$aPhilosophy. 615 24$aArchitectural History and Theory. 615 24$aCritical Theory. 615 24$aArchitecture. 676 $a720.1 700 $aJackson$b Mark Laurence$0967409 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 912 $a9910591040603321 996 $aDiagrams of Power in Benjamin and Foucault$92911555 997 $aUNINA LEADER 05189nam 22005535 450 001 9911018758603321 005 20250723130302.0 010 $a3-031-85114-5 024 7 $a10.1007/978-3-031-85114-8 035 $a(MiAaPQ)EBC32234559 035 $a(Au-PeEL)EBL32234559 035 $a(CKB)39710509800041 035 $a(DE-He213)978-3-031-85114-8 035 $a(OCoLC)1530382687 035 $a(EXLCZ)9939710509800041 100 $a20250723d2025 u| 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aBulk-Driven Circuit Techniques for CMOS FDSOI Processes $eFrom Circuit Concept to Implementations /$fedited by Friedel Gerfers 205 $a1st ed. 2025. 210 1$aCham :$cSpringer Nature Switzerland :$cImprint: Springer,$d2025. 215 $a1 online resource (357 pages) 311 08$a3-031-85113-7 327 $aChapter 1. Common-Source Amplifier Feedback using Back-Gate Transconductance -- Chapter 2. Transconductance Amplifier Linearization using Active Back-Gate Input Signal Injection -- Chapter 3. A Gain-enhanced Inverter-based OTA Employing Active Body-Bias Feedback -- Chapter 4. Ultra Low-Power Voltage-Mode VCSEL-Driver with Back-Gate Bias Tuning -- Chapter 5. Maximizing the Figures of Merit, Temperature Range, and Optimizing the Algorithmic Design Methodologies Based on Constant Current Density Bias for FDSOI Analog-Mixed-Signal, Digital, mm-Wave, and Fibreoptic Circuits from the Back-Gate Voltage -- Chapter 6. A Back-Gate Linearization Technique for Current-Steering DACs -- Chapter 7. Highly-Linear T&H-Amplifiers Utilizing Bandwidth Boosting for Time-Interleaved ADCs -- Chapter 8. High-Speed Flash ADC using Bulk-Driven Flash Reference Generation Technique -- Chapter 9. RF Switches in CMOS FDSOI Process ? from Circuit Concepts to Implementation -- Chapter 10. Variable Gain-Control with Bulk Biasing in mmW Amplifier. 330 $aIn the contemporary technology landscape dominated by digital-centric systems and applications, the significance of analog front-end signal processing remains indispensable. The precision and performance of critical analog, mixed-signal or mm-wave components such as low-noise amplifiers, equalizers, and data converters are fundamentally determined by technological parameters, such as transconductance, DC gain, device matching, linearity, and timing accuracy, among others. Enhancing these parameters through intrinsic design improvements presents a significant challenge and becomes infeasible beyond certain limits with state-of-the-art circuit design techniques. As the performance of CMOS transistors is fundamentally constrained, foreground or background calibration schemes are commonly employed to mitigate the limitations of MOS devices. However, these constraints can be effectively addressed through the implementation of active and passive bulk-driven circuits enabled by silicon-on-insulator (SOI) CMOS technologies. Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS technologies offer superior transistor characteristics compared to standard bulk CMOS technology, providing enhanced electrical performance, improved power efficiency, and better scalability. This book offers a comprehensive analysis of FD-SOI CMOS technology, presenting key innovations in design methodologies and circuit implementations adopting bulk-biasing techniques across analog, digital, mixed-signal, and mmWave circuits and systems. It addresses critical transistor limitations, including finite transistor gain, offset, mismatch, noise and linearity, among others. The authors provide detailed technical insights, mathematical modelling, design approaches and circuit realizations covering circuit advances using both static and dynamic transistor body-biasing techniques. Emphasis is placed on overcoming state-of-the-art circuit limitations such as finite DC gain, bandwidth, matching/accuracy and power efficiency. These performance metrics are rigorously investigated through mathematical modelling, validated through simulation and experimentally demonstrated using both dynamic and static body-biasing architectures. An essential guide for innovations using dynamic and static transistor body-biasing techniques; Describes FD-SOI CMOS bulk physics incl. the impact on technology parameters; Presents advanced active and passive body-biasing design methods. 606 $aElectronic circuit design 606 $aEmbedded computer systems 606 $aMaterials 606 $aElectronics Design and Verification 606 $aEmbedded Systems 606 $aMaterials for Devices 615 0$aElectronic circuit design. 615 0$aEmbedded computer systems. 615 0$aMaterials. 615 14$aElectronics Design and Verification. 615 24$aEmbedded Systems. 615 24$aMaterials for Devices. 676 $a621.3815 700 $aGerfers$b Friedel$0725301 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911018758603321 996 $aBulk-Driven Circuit Techniques for CMOS FDSOI Processes$94415483 997 $aUNINA