LEADER 01996nam  2200541Ia 450 
001 9911007369103321
005 20200520144314.0
010   $a1-62198-827-9
010   $a1-61353-079-X
035   $a(CKB)1000000000704070
035   $a(EBL)1191611
035   $a(SSID)ssj0000384521
035   $a(PQKBManifestationID)12102942
035   $a(PQKBTitleCode)TC0000384521
035   $a(PQKBWorkID)10339194
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035   $a(MiAaPQ)EBC1191611
035   $a(EXLCZ)991000000000704070
100   $a19951201d1994      uy         0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 10$aMicrowave field-effect transistors $etheory, design, and applications /$fby Raymond S. Pengelly
205   $a3rd ed.
210   $aAtlanta $cNoble$d1994
215   $a1 online resource (704 p.)
225 1 $aNoble Publishing classic series
300   $aDescription based upon print version of record.
311   $a1-884932-50-9 
320   $aIncludes bibliographical references and index.
330   $aThis book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations.
410  0$aNoble Publishing classic series.
517 3 $aMicrowave field effect transistors
606   $aGallium arsenide semiconductors
606   $aMetal semiconductor field-effect transistors
615  0$aGallium arsenide semiconductors.
615  0$aMetal semiconductor field-effect transistors.
676   $a621.381/33
700   $aPengelly$b Raymond S$g(Raymond Sydney),$f1948-$01823209
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9911007369103321
996   $aMicrowave field-effect transistors$94389759
997   $aUNINA