LEADER 05281nam 22006374a 450 001 9911006841703321 005 20200520144314.0 010 $a0-08-094685-2 010 $a9786612755231 010 $a1-282-75523-4 010 $a1-282-01377-7 010 $a9786612013775 010 $a0-8155-1680-0 035 $a(CKB)111056552538542 035 $a(EBL)421077 035 $a(OCoLC)437108078 035 $a(SSID)ssj0000071688 035 $a(PQKBManifestationID)11107225 035 $a(PQKBTitleCode)TC0000071688 035 $a(PQKBWorkID)10091380 035 $a(PQKB)10079344 035 $a(MiAaPQ)EBC421077 035 $a(EXLCZ)99111056552538542 100 $a20030715d2003 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aCrystal growth technology /$fK. Byrappa, T. Ohachi (eds.) 210 $aNorwich, N.Y. $cWilliam Andrew Pub. ;$aBerlin ;$aNew York $cSpringer$d[2003] 215 $a1 online resource (613 p.) 225 1 $aSpringer series in materials processing,$x1434-9795 300 $aDescription based upon print version of record. 311 $a0-8155-1453-0 320 $aIncludes bibliographical references and index. 327 $aFront Cover; Crystal Growth Technology; Copyright Page; Contents; Chapter 1 Growth Histories of Mineral Crystals as Seen from Their Morphological Features; 1.1 Introduction; 1.2 Morphology of Crystals; 1.3 Diamond; 1.4 Beryl; 1.5 Trapiche Ruby; 1.6 Summary; References; Chapter 2 Theory of Crystal Growth from Vapor and Solution; 2.1 Various Crystal Growth Processes; 2.2 Vapor Growth; 2.3 Growth of a Crystal in a Solution; References; Chapter 3 Epitaxial Growth of III-V Compounds; 3.1 Introduction; 3.2 MBE of III-V Compounds; 3.3 MOCVD of III-V Compounds; 3.4 Summary; References 327 $aChapter 4 CVD Diamond Growth4.1 Introduction; 4.2 Preparation and Application of CVD Film; 4.3 Nucleation and Growth of Diarno; 4.4 Phase Diagram and Gas-Phase Species in CVD Diamond Growth Processes; 4.5 In Situ Diagnostic Techniques for Diamond Growth; 4.6 Summary; References; Chapter 5 Laser-Assisted Growth and Characterization of Multicomponent Lead-Zirconate-Titanate Films; 5.1 Introduction; 5.2 Film Deposition Process; 5.3 Case Study: Nd-Modified PZT Films; 5.4 Results from XRD and EDS Measurements; 5.5 Compositional and Structural Changes in the Target 327 $a5.6 Raman Spectroscopy Studies of PZT Films5.7 Electrical Properties of PNZT Films; 5.8 Summary; References; Chapter 6 Silicon Carbide Crystals -Part I: Growth and Characterization; 6.1 Introduction; 6.2 Vapor Growth; 6.3 High Temperature Solution Growth; 6.4 Bulk Growth by Seeded Sublimation: The Industrial Process; 6.5 Doping in Bulk and Epitaxial Growth; 6.6 Growth Defects; 6.7 Defect Analysis; 6.8 Summary; References; Chapter 7 Silicon Carbide Crystals - Part II: Process Physics and Modeling; 7.1 Introduction; 7.2 Modeling of Heat and Mass Transfer and Growth Rate; 7.3 Growth Simulation 327 $a7.4 Summary References; Chapter 8 Thermodynamics of Multicomponent Perovskite Synthesis in Hydrothermal Solution; 8.1 Introduction; 8.2 Thermodynamic Model; 8.3 Validation and Applications of Thermodynamic Modeling; 8.4 Summary; References; Chapter 9 Growth of Multicomponent Perovskite Oxide Crystals: Synthesis Conditions for the Hydrothermal Growth of Ferroelectric Powders; 9.1 Introduction; 9.2 General Overview; 9.3 Synthesis Conditions for Controlled Chemical and Phase Purity; 9.4 Kinetics and Rate Controlling Mechanisms; 9.5 Synthesis Conditions for Controlled Morphology 327 $a9.6 Syntesis Conditions for Controlled Particle Size9.7 Summary; References; Chapter 10 Crystal Growth, Size, and Morphology Control of Nd:RVO4 Under Hydrothermal Conditions; 10.1 Introduction; 10.2 Technologically Important Vanadates; 10.3 Phase Equilibria; 10.4 Structure of Nd:RVO4; 10.5 Synthesis and Growth of Rare Earth Vanadates; 10.6 Solubility Study; 10.7 Crystal Growth; 10.8 Morphology; 10.9 Characterization; 10.10 Summary; References; Chapter 11 Hydrothermal Growth of Quartz Under Specific Conditions and the Raman Spectra of Ion Species in a Hydrothermal Growth Solution 327 $a11.1 Introduction 330 $aCrystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow t 410 0$aSpringer series in materials processing. 606 $aCrystal growth 615 0$aCrystal growth. 676 $a548/.5 701 $aByrappa$b K$01442222 701 $aOhachi$b T$01825200 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911006841703321 996 $aCrystal growth technology$94392714 997 $aUNINA