LEADER 01011nam a2200265 i 4500 001 991000724509707536 008 100510s2009 xxk b 001 0 eng 020 $a9780415397445 020 $a0415397448 035 $ab13901606-39ule_inst 040 $aDip.to Studi Giuridici$bita 100 1 $aPerkins, Judith,$d1944-$0473003 245 10$aRoman imperial identities in the early Christian era /$cJudith Perkins 260 $aAbingdon ;$aNew York, NY :$bRoutledge,$c2009 300 $ax, 209 p. ;$c24 cm 500 $aContiene un indice 504 $aBibliografia: p. 182-204 650 04$aCristianesimo e Impero romano 650 04$aIdentità etnica$zImpero romano 907 $a.b13901606$b02-04-14$c10-05-10 912 $a991000724509707536 945 $aLE027 R-XV/E 205$g1$i2027000240876$lle027$o-$pE74.80$q-$rl$s- $t0$u0$v0$w0$x0$y.i15149341$z30-06-10 996 $aRoman imperial identities in the early Christian era$9227375 997 $aUNISALENTO 998 $ale027$b10-05-10$cm$da $e-$feng$gxxk$h0$i0 LEADER 01111nam0 22002771i 450 001 UON00422278 005 20231205104830.877 010 $a01-17-72382-7 100 $a20130411d1983 |0itac50 ba 101 $aeng 102 $aGB 105 $a|||| ||||| 200 1 $aˆThe ‰British army in the Falklands 1982$fintroduction by John W. Stanier 210 $aLondon$cher majesty's stationery office$d1983 215 $a32 p.$cill.$d30 cm. 606 $aINGHILTERRA$xStoria $xSec. 20.$3UONC083648$2FI 620 $aGB$dLondon$3UONL003044 676 $a820.9358$cLetteratura inglese su temi storici e politici$v21 700 1$aSTANIER$bJohn W.$3UONV215152$0710572 712 $aHer Majesty's Stationery Office$3UONV276635$4650 801 $aIT$bSOL$c20240220$gRICA 899 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$2UONSI 912 $aUON00422278 950 $aSIBA - SISTEMA BIBLIOTECARIO DI ATENEO$dSI Angl VI C 0253 $eSI LO 45758 5 0253 $sBuono 996 $aBritish army in the Falklands 1982$91334776 997 $aUNIOR LEADER 04769nam 2200709 a 450 001 9911006806203321 005 20200520144314.0 010 $a1-107-21590-0 010 $a1-282-97823-3 010 $a9786612978234 010 $a0-511-93186-7 010 $a0-511-97385-3 010 $a0-511-92375-9 010 $a0-511-93322-3 010 $a0-511-92801-7 010 $a0-511-92548-4 010 $a0-511-93052-6 035 $a(CKB)2670000000068471 035 $a(EBL)605001 035 $a(OCoLC)700697483 035 $a(SSID)ssj0000471561 035 $a(PQKBManifestationID)11973351 035 $a(PQKBTitleCode)TC0000471561 035 $a(PQKBWorkID)10428563 035 $a(PQKB)10518346 035 $a(UkCbUP)CR9780511973857 035 $a(MiAaPQ)EBC605001 035 $a(PPN)26136426X 035 $a(EXLCZ)992670000000068471 100 $a20101207d2011 uy 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aNanoscale MOS transistors $esemi-classical transport and applications /$fDavid Esseni, Pierpaolo Palestri, and Luca Selmi 210 $aCambridge ;$aNew York $cCambridge University Press$d2011 215 $a1 online resource (xvii, 470 pages) $cdigital, PDF file(s) 300 $aTitle from publisher's bibliographic system (viewed on 05 Oct 2015). 311 $a0-521-51684-6 320 $aIncludes bibliographical references and index. 327 $aMachine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential. 330 $a"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"--$cProvided by publisher. 330 $a"The traditional geometrical scaling of the CMOS technologies has recently evolved in a generalized scaling scenario where material innovations for different intrinsic regions of MOS transistors as well as new device architectures are considered as the main routes toward further performance improvements. In this regard, high-? dielectrics are used to reduce the gate leakage with respect to the SiO2 for a given drive capacitance, while the on-current of the MOS transistors is improved by using strained silicon and possibly with the introduction of alternative channel materials. Moreover, the ultra-thin body Silicon-On-Insulator (SOI) device architecture shows an excellent scalability even with a very lightly doped silicon film, while non-planar FinFETs are also of particular interest, because they are a viable way to obtain double-gate SOI MOSFETs and to realize in the same fabrication process n-MOS and p-MOS devices with different crystal orientations"--$cProvided by publisher. 606 $aMetal oxide semiconductors$xDesign and construction 606 $aElectron transport 606 $aNanoelectronics 615 0$aMetal oxide semiconductors$xDesign and construction. 615 0$aElectron transport. 615 0$aNanoelectronics. 676 $a004.5/3 686 $aTEC008080$2bisacsh 700 $aEsseni$b D$g(David)$01824104 701 $aPalestri$b P$g(Pierpaolo)$01824105 701 $aSelmi$b L$g(Luca)$01824106 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911006806203321 996 $aNanoscale MOS transistors$94391166 997 $aUNINA