LEADER 03803nam 22005293 450 001 9911006734003321 005 20250604220005.0 010 $a9783036416465 010 $a3036416463 035 $a(MiAaPQ)EBC31648667 035 $a(Au-PeEL)EBL31648667 035 $a(CKB)34825775800041 035 $a(Exl-AI)31648667 035 $a(OCoLC)1455117256 035 $a(EXLCZ)9934825775800041 100 $a20240907d2024 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aProcessing and Characteristics of Solid-State Structures 205 $a1st ed. 210 1$aZurich :$cTrans Tech Publications, Limited,$d2024. 210 4$d©2024. 215 $a1 online resource (143 pages) 225 1 $aSolid State Phenomena,$x1662-9779 ;$vVolume 358 311 08$a9783036406466 311 08$a3036406468 327 $aIntro -- Processing and Characteristics of Solid-State Structures -- Preface -- Table of Contents -- Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors -- Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board -- Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices -- Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters -- Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation -- Modeling the Charging of Gate Oxide under High Electric Field -- Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy -- Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C -- Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces -- A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate -- Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs -- Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs -- Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs -- Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs -- Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs -- Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC -- Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers. 327 $aFail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical Modeling -- Gate Resistance Integration in SiC MOSFETs: Performance Simulations under Different Implementation Methods -- Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD -- Keyword Index -- Author Index. 330 $aSpecial topic volume with invited peer-reviewed papers only. 410 0$aDiffusion and defect data$nPt. B,$pSolid state phenomena ;$vVolume 358 606 $aMetal oxide semiconductors$7Generated by AI 606 $aSilicon carbide$7Generated by AI 615 0$aMetal oxide semiconductors 615 0$aSilicon carbide 700 $aRiccio$b Michele$01822804 701 $aIrace$b Andrea$0515880 701 $aBreglio$b Giovanni$01822805 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911006734003321 996 $aProcessing and Characteristics of Solid-State Structures$94389214 997 $aUNINA