LEADER 04916nam 22005413 450 001 9911006710703321 005 20250604220055.0 010 $a9783036416335 010 $a3036416331 035 $a(MiAaPQ)EBC31648666 035 $a(Au-PeEL)EBL31648666 035 $a(CKB)34825775500041 035 $a(Exl-AI)31648666 035 $a(OCoLC)1455131524 035 $a(EXLCZ)9934825775500041 100 $a20240907d2024 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aSolid-State Power Devices 205 $a1st ed. 210 1$aZurich :$cTrans Tech Publications, Limited,$d2024. 210 4$dİ2024. 215 $a1 online resource (203 pages) 225 1 $aSolid State Phenomena,$x1662-9779 ;$vVolume 360 311 08$a9783036406336 311 08$a3036406336 327 $aIntro -- Solid-State Power Devices: Circuitry and Characterizations -- Preface -- Table of Contents -- 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class -- Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs -- Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics -- Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics -- Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P+ Contacts -- Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices -- 1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On -- Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography -- Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET -- A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism -- SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations -- High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module -- Normally-Off 1200V Silicon Carbide JFET Diode with Low VF -- On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs -- Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations -- Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device. 327 $aVisualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique -- Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor -- Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 m? 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures -- Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination -- Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain -- Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs -- Comparison of Si CMOS and SiC CMOS Operational Amplifiers -- Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC -- Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs -- The First Optimisation of a 16 kV 4H-SiC N-Type IGCT -- Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET -- Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs -- Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation -- Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes -- Keyword Index -- Author Index. 330 $aSpecial topic volume with invited peer-reviewed papers only. 410 0$aDiffusion and defect data$nPt. B,$pSolid state phenomena ;$vVolume 360 606 $aSilicon carbide$7Generated by AI 606 $aPower electronics$7Generated by AI 615 0$aSilicon carbide 615 0$aPower electronics 676 $a621.31242 700 $aRiccio$b Michele$01822804 701 $aIrace$b Andrea$0515880 701 $aBreglio$b Giovanni$01822805 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911006710703321 996 $aSolid-State Power Devices$94389213 997 $aUNINA